SI3475DV-T1-GE3 Vishay

SI3475DV-T1-GE3

Manufacturer Part Number

SI3475DV-T1-GE3

Description

P-CHANNEL 200-V (D-S) MOSFET

Manufacturer

Vishay

Series

TrenchFET®r

Specifications of SI3475DV-T1-GE3

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

1.61 Ohm @ 900mA, 10V

Drain To Source Voltage (vdss)

200V

Current - Continuous Drain (id) @ 25° C

950mA

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

18nC @ 10V

Input Capacitance (ciss) @ Vds

500pF @ 50V

Power - Max

3.2W

Mounting Type

Surface Mount

Package / Case

6-TSOP (0.063", 1.60mm Width)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

SI3475DV-T1-GE3TR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SI3475DV-T1-GE3

Manufacturer:

IDT

Quantity:

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