SI4100DY-T1-E3 Vishay, SI4100DY-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI4100DY-T1-E3
• Description: N-CHANNEL 100-V (D-S) MOSFET
• Manufacturer: Vishay

Specifications of SI4100DY-T1-E3

• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.063 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.4 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69251
S09-0220-Rev. B, 09-Feb-09
8
6
4
2
0
0
25
T
D
C
Current Derating*
- Case Temperature (°C)
50
is based on T
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
125
150
6
5
4
3
2
1
0
25
50
T
C
- Case Temperature (°C)
Power Derating
75
Vishay Siliconix
100
Si4100DY
www.vishay.com
125
150
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