SI4172DY-T1-GE3 Vishay, SI4172DY-T1-GE3 Datasheet

N-CHANNEL 30V (D-S) MOSFET

SI4172DY-T1-GE3

Manufacturer Part Number
SI4172DY-T1-GE3
Description
N-CHANNEL 30V (D-S) MOSFET
Manufacturer
Vishay
Datasheet

Specifications of SI4172DY-T1-GE3

Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.012 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
52 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
11 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4172DY-T1-GE3
Manufacturer:
VISHAY
Quantity:
30 000
Part Number:
SI4172DY-T1-GE3
Manufacturer:
VISHAY
Quantity:
300
Part Number:
SI4172DY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Base on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Document Number: 69000
S-82665-Rev. A, 03-Nov-08
Ordering Information: Si4172DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
30
(V)
C
= 25 °C.
0.015 at V
0.012 at V
G
S
S
S
R
DS(on)
1
2
3
4
GS
GS
J
(Ω)
= 4.5 V
Top View
= 150 °C)
= 10 V
b, d
SO-8
N-Channel 30-V (D-S) MOSFET
8
7
6
5
I
D
15
13
(A)
D
D
D
D
a
A
= 25 °C, unless otherwise noted
Q
Steady State
6.8 nC
g
T
T
T
L = 0.1 mH
T
T
T
T
T
T
T
C
C
C
C
C
(Typ.)
A
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free
• Optimized for High-Side Synchronous
• 100 % R
• 100 % UIS Tested
• Notebook CPU Core
Symbol
Symbol
T
J
R
R
TrenchFET
Rectifier Operation
- High-Side Switch
V
V
E
I
I
P
, T
I
DM
I
AS
thJA
thJF
DS
GS
AS
D
S
D
stg
g
Tested
®
Power MOSFET
Typical
38
22
- 55 to 150
2.1
2.5
1.6
Limit
11
G
± 20
9
3.8
4.5
2.8
30
15
12
50
22
24
b, c
b, c
b, c
b, c
b, c
N-Channel MOSFET
Maximum
50
28
Vishay Siliconix
D
S
Si4172DY
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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SI4172DY-T1-GE3 Summary of contents

Page 1

... Top View Ordering Information: Si4172DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si4172DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... On-Resistance vs. Drain Current and Gate Voltage Total Gate Charge (nC) g Gate Charge Document Number: 69000 S-82665-Rev. A, 03-Nov- 1200 900 600 300 Si4172DY Vishay Siliconix ° ° 125 ° 0.0 0.5 1.0 1.5 2 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1 ...

Page 4

... Si4172DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 2.2 2.0 1.8 1.6 1.4 1.2 1 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.030 0.025 0.020 °C J 0.015 ...

Page 5

... T - Case Temperature (°C) C Current Derating* 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si4172DY Vishay Siliconix 125 150 2.0 1.5 1.0 0.5 0 100 T - Ambient Temperature (°C) A Power Derating, Junction-to-Ambient www.vishay.com 125 150 ...

Page 6

... Si4172DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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