SI4310BDY-T1-E3 Vishay, SI4310BDY-T1-E3 Datasheet
SI4310BDY-T1-E3
Specifications of SI4310BDY-T1-E3
Related parts for SI4310BDY-T1-E3
SI4310BDY-T1-E3 Summary of contents
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... Top View Ordering Information: Si4310BDY-T1-E3 (Lead (Pb)-free) Si4310BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
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... Si4310BDY Vishay Siliconix MOSFET SPECIFICATIONS T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance b Diode Forward Voltage a Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge ...
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... J Symbol Test Conditions 2000 1600 1200 Si4310BDY Vishay Siliconix Min. Typ. Max. 0.485 = 125 °C 0.42 0.008 0.100 = 75 °C 0 125 °C 0.5 J 102 125 ° ° °C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3 Gate-to-Source Voltage (V) ...
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... Si4310BDY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Total Gate Charge (nC) g Gate Charge 150 0.0 0.2 0.4 0 Source-Drain Diode Forward Voltage 0.4 0 250 µA D 0.0 - 0.2 - 0.4 - 0 Temperature (°C) J Threshold Voltage www.vishay.com 0.8 1.0 1 Voltage (V) 75 100 ...
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... V - Drain-to-Source Voltage ( > minimum V at which DS(on) Safe Operating Area, Junction-to-Case - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4310BDY Vishay Siliconix 100 100 is specified Notes Duty Cycle Per Unit Base = C/W ...
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... Si4310BDY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru Drain-to-Source Voltage (V) DS Output Characteristics 0.015 0.012 0.009 0.006 0.003 0.000 Drain Current (A) D On-Resistance vs. Drain Current Total Gate Charge (nC) g Gate Charge www.vishay.com 125 ° °C 0 0.0 0.5 1 ...
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... 100 125 150 100 Limited DS(on 0 Single Pulse 0.01 0 Drain-to-Source Voltage ( > minimum V at which DS(on) Safe Operating Area, Junction-to-Case Si4310BDY Vishay Siliconix 0.020 0.016 0.012 0.008 0.004 0.000 Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 200 160 120 0. Time (s) Single Pulse Power ...
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... Si4310BDY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0 0.01 0.001 ...
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... S09-2436-Rev. B, 16-Nov-09 500 400 300 200 100 Reverse Voltage (V) KA Capacitance - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4310BDY Vishay Siliconix 24 30 Notes Duty Cycle Per Unit Base = R = 100 °C/W thJA ( ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...