SI4483ADY-T1-GE3 Vishay

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SI4483ADY-T1-GE3

Manufacturer Part Number
SI4483ADY-T1-GE3
Description
P-CHANNEL 30-V (D-S) MOSFET
Manufacturer
Vishay
Series
TrenchFET®r

Specifications of SI4483ADY-T1-GE3

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8.8 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
19.2A
Vgs(th) (max) @ Id
2.6V @ 250µA
Gate Charge (qg) @ Vgs
135nC @ 10V
Input Capacitance (ciss) @ Vds
3900pF @ 15V
Power - Max
5.9W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.0088 Ohms
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
13.5 A
Power Dissipation
2.9 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI4483ADY-T1-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4483ADY-T1-GE3
Manufacturer:
VISHAY
Quantity:
3 745
Part Number:
SI4483ADY-T1-GE3
Manufacturer:
VISHAY
Quantity:
310
Part Number:
SI4483ADY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI4483ADY-T1-GE3
0

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