SI4497DY-T1-GE3 Vishay

P-CHANNEL 30-V (D-S) MOSFET

SI4497DY-T1-GE3

Manufacturer Part Number

SI4497DY-T1-GE3

Description

P-CHANNEL 30-V (D-S) MOSFET

Manufacturer

Vishay

Series

TrenchFET®r

Specifications of SI4497DY-T1-GE3

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

3.3 mOhm @ 20A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

36A

Vgs(th) (max) @ Id

2.5V @ 250µA

Gate Charge (qg) @ Vgs

285nC @ 10V

Input Capacitance (ciss) @ Vds

9685pF @ 15V

Power - Max

7.8W

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Configuration

Single

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.0027 Ohms

Forward Transconductance Gfs (max / Min)

75 S

Drain-source Breakdown Voltage

- 30 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

- 36 A

Power Dissipation

7.8 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Gate Charge Qg

190 nC

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

SI4497DY-T1-GE3TR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

SI4497DY-T1-GE3

Manufacturer:

VISHAY

Quantity:

4 186

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

SI4497DY-T1-GE3

Manufacturer:

VISHAY

Quantity:

25 000

Company:

Amily Shenzhen XNWY Technology Co., Ltd

Amily Shenzhen XNWY Technology Co., Ltd

Part Number:

SI4497DY-T1-GE3

0

Company:

H&T Electronics

H&T Electronics

Part Number:

SI4497DY-T1-GE3

Quantity:

70 000

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