SI4622DY-T1-E3 Vishay, SI4622DY-T1-E3 Datasheet - Page 10

• Manufacturer Part Number: SI4622DY-T1-E3
• Description: DUAL N-CH 30-V (D-S) MOSFET W/SCHOTTKY
• Manufacturer: Vishay

Specifications of SI4622DY-T1-E3

• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.016 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 8 A, 6.7 A
• Power Dissipation: 2.2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

Si4622DY
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
10
4.0
3.2
2.4
1.6
0.8
0.0
0
Power Derating, Junction-to-Foot
25
D
T
C
is based on T
50
- Case Temperature (°C)
75
J(max)
100
10
8
6
4
2
0
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
0
Package Limited
125
25
New Product
150
T
C
Current Derating*
50
- Case Temperature (°C)
75
100
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
125
Power Derating, Junction-to-Ambient
25
150
T
A
- Ambient Temperature (°C)
50
75
S09-0764-Rev. B, 04-May-09
Document Number: 68695
100
125
150