SI4892DY-T1-E3 Vishay, SI4892DY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4892DY-T1-E3
• Description: TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,8.8A I(D),SO
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71407
S09-0221-Rev. G, 09-Feb-09
0.025
0.020
0.015
0.010
0.005
0.000
50
10
10
1
8
6
4
2
0
0
0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
2
= 12.4 A
0.2
On-Resistance vs. Drain Current
= 15 V
10
V
V
GS
SD
4
Q
T
g
= 4.5 V
- Source-to-Drain Voltage (V)
J
0.4
I
- Total Gate Charge (nC)
D
= 150 °C
- Drain Current (A)
Gate Charge
6
20
0.6
8
30
10
0.8
T
V
J
GS
12
= 25 °C
= 10 V
40
1.0
14
1.2
16
50
1200
1000
0.05
0.04
0.03
0.02
0.01
0.00
800
600
400
200
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
- 25
V
I
C
D
GS
rss
= 12.4 A
5
= 10 V
2
C
V
C
V
DS
iss
oss
GS
T
0
J
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
10
25
Capacitance
4
I
D
50
15
= 12.4 A
Vishay Siliconix
6
75
Si4892DY
20
www.vishay.com
100
8
25
125
150
10
30
3