SI4892DY-T1-E3 Vishay, SI4892DY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4892DY-T1-E3
• Description: TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,8.8A I(D),SO
• Manufacturer: Vishay

Document Number: 71407
S-51455—Rev. F, 01-Aug-05
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.025
0.020
0.015
0.010
0.005
0.000
10
8
6
4
2
0
50
10
1
0
0
0.00
V
I
D
2
DS
Source-Drain Diode Forward Voltage
= 12.4 A
On-Resistance vs. Drain Current
0.2
10
= 15 V
V
V
SD
GS
4
Q
T
g
J
= 4.5 V
– Source-to-Drain Voltage (V)
I
= 150_C
D
– Total Gate Charge (nC)
0.4
– Drain Current (A)
6
Gate Charge
20
8
0.6
30
10
0.8
V
GS
12
T
J
= 10 V
40
= 25_C
1.0
14
50
16
1.2
0.05
0.04
0.03
0.02
0.01
0.00
1200
1000
800
600
400
200
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
–50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
–25
V
I
D
GS
= 12.4 A
C
5
V
2
V
rss
GS
= 10 V
DS
T
J
0
– Gate-to-Source Voltage (V)
– Junction Temperature (_C)
– Drain-to-Source Voltage (V)
10
25
Capacitance
C
4
oss
C
I
D
Vishay Siliconix
iss
= 12.4 A
50
15
6
75
Si4892DY
20
100
www.vishay.com
8
25
125
10
150
30
3