SI6983DQ-T1-GE3 Vishay, SI6983DQ-T1-GE3 Datasheet

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SI6983DQ-T1-GE3

Manufacturer Part Number
SI6983DQ-T1-GE3
Description
DUAL P CHANNEL MOSFET, -20V, TSSOP
Manufacturer
Vishay
Datasheet

Specifications of SI6983DQ-T1-GE3

Transistor Polarity
P Channel
Continuous Drain Current Id
-5.4A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
42mohm
Rds(on) Test Voltage Vgs
8V
Threshold Voltage Vgs Typ
-1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72367
S-81221-Rev. D, 02-Jun-08
PRODUCT SUMMARY
Ordering Information: Si6983DQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
- 20
G
D
S
S
(V)
1
1
1
1
1
2
3
4
TSSOP-8
0.024 at V
0.030 at V
0.042 at V
T op V iew
R
DS(on)
J
a
= 150 °C)
a
GS
GS
GS
Dual P-Channel 20-V (D-S) MOSFET
= - 4.5 V
= - 2.5 V
= - 1.8 V
(Ω)
8
7
6
5
a
D
S
S
G
2
2
2
2
a
A
= 25 °C, unless otherwise noted
I
- 5.4
- 4.8
- 4.0
D
Steady State
Steady State
(A)
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free
• Load Switch
• Battery Switch
Symbol
Symbol
T
G
R
R
J
TrenchFET
V
V
1
I
P
, T
I
DM
thJA
thJF
I
DS
GS
D
S
D
P-Channel MOSFET
stg
S
D
1
1
®
Power MOSFET
Typical
- 5.4
- 4.3
- 1.0
10 s
1.14
0.73
124
86
52
- 55 to 150
- 20
- 30
± 8
Steady State
G
Maximum
2
P-Channel MOSFET
- 4.6
- 3.7
- 0.7
0.83
0.53
110
150
65
Vishay Siliconix
Si6983DQ
S
D
2
2
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
RoHS
COMPLIANT
1

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SI6983DQ-T1-GE3 Summary of contents

Page 1

... iew Ordering Information: Si6983DQ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si6983DQ Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... 0.1 0.0 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72367 S-81221-Rev. D, 02-Jun °C J 0.9 1.2 1.5 Si6983DQ Vishay Siliconix 3500 3000 2500 C iss 2000 1500 1000 C oss 500 C rss Drain-to-Source Voltage (V) DS Capacitance 1.40 1 ...

Page 4

... Si6983DQ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 0.3 0 400 µA D 0.1 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 100 125 150 100 Limited by R DS(on 0 °C C Single Pulse ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72367. Document Number: 72367 S-81221-Rev. D, 02-Jun- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si6983DQ Vishay Siliconix - www.vishay.com 10 5 ...

Page 6

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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