SI7149DP-T1-GE3 Vishay, SI7149DP-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI7149DP-T1-GE3
• Description: P-CHANNEL 30-V (D-S) MOSFET
• Manufacturer: Vishay

Specifications of SI7149DP-T1-GE3

• Transistor Polarity: P Channel
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 4.2mohm
• Rds(on) Test Voltage Vgs: -10V
• Voltage Vgs Max: 25V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOIC
• Rohs Compliant: Yes
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 5.2 mOhms at 10 V
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 42 A
• Power Dissipation: 6.25 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68934
S-82620-Rev. A, 03-Nov-08
90
72
54
36
18
0
0
25
D
Power, Junction-to-Case
T
is based on T
C
50
- Case Temperature (°C)
75
J(max)
100
100
80
60
40
20
0
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
0
Package Limited
125
25
New Product
150
T
C
50
Current Derating*
- Case Temperature (°C)
75
100
2.5
2.0
1.5
1.0
0.5
0.0
0
125
Power Derating, Junction-to-Ambient
25
150
T
A
- Ambient Temperature (°C)
50
75
Vishay Siliconix
100
Si7149DP
www.vishay.com
125
150
5