SI7326DN-T1-E3 Vishay, SI7326DN-T1-E3 Datasheet

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SI7326DN-T1-E3

Manufacturer Part Number
SI7326DN-T1-E3
Description
N-CH 30-V (D-S) FAST SWITCHING MOSFE
Manufacturer
Vishay
Datasheets

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7326DN-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI7326DN-T1-E3
Quantity:
1 380
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 74444
S-83051-Rev. C, 29-Dec-08
Ordering Information: Si7326DN-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
V
DS
30
8
(V)
3.30 mm
D
7
D
6
PowerPAK 1212-8
D
Si7326DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel 30-V (D-S) Fast Switching MOSFET
5
Bottom View
0.0195 at V
0.030 at V
D
R
DS(on)
1
J
a
S
= 150 °C)
a
GS
GS
2
(Ω)
S
= 4.5 V
= 10 V
3
S
a
3.30 mm
4
G
a
b, c
A
I
= 25 °C, unless otherwise noted
D
10
Steady State
Steady State
8
(A)
L = 0.1 mH
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• New Low Thermal Resistance PowerPAK
• 100 % R
• DC/DC Conversion
Symbol
Symbol
T
R
R
J
Available
Package with Low 1.07 mm Profile
V
V
E
I
I
P
, T
I
DM
thJA
thJC
I
AS
DS
GS
AS
D
S
D
stg
g
Tested
®
Power MOSFET
Typical
10 s
7.5
2.9
3.5
1.9
4.5
10
28
65
G
- 55 to 150
N-Channel MOSFET
± 25
260
30
40
15
11
Steady State
Maximum
D
S
6.5
5.0
1.2
1.5
0.8
6.0
35
81
Vishay Siliconix
Si7326DN
www.vishay.com
®
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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