SI7911DN-T1-GE3 Vishay
![no-image](/images/manufacturer_photos/0/6/697/vishay_sml.jpg)
SI7911DN-T1-GE3
Manufacturer Part Number
SI7911DN-T1-GE3
Description
DUAL P-CHANNEL 20-V (D-S) MOSFET
Manufacturer
Vishay
Series
TrenchFET®r
Specifications of SI7911DN-T1-GE3
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
51 mOhm @ 5.7A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.2A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 4.5V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8 Dual
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI7911DN-T1-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7911DN-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000