SI9433BDY-T1-GE3 Vishay, SI9433BDY-T1-GE3 Datasheet - Page 3
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SI9433BDY-T1-GE3
Manufacturer Part Number
SI9433BDY-T1-GE3
Description
P-CHANNEL 20-V (D-S) MOSFET
Manufacturer
Vishay
Datasheet
1.SI9433BDY-T1-E3.pdf
(6 pages)
Specifications of SI9433BDY-T1-GE3
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
40 mOhm @ 6.2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.5A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 4.5V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Transistor Polarity
P Channel
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
30mohm
Rds(on) Test Voltage Vgs
-4.5V
Voltage Vgs Max
12V
Operating Temperature Range
-55°C To +150°C
Transistor
RoHS Compliant
Transistor Case Style
SOIC
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI9433BDY-T1-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI9433BDY-T1-GE3
Manufacturer:
ADI
Quantity:
200
Part Number:
SI9433BDY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72755
S09-0870-Rev. B, 18-May-09
0.15
0.12
0.09
0.06
0.03
0.00
0.1
10
6
5
4
3
2
1
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 6.2 A
V
0.2
On-Resistance vs. Drain Current
= 6 V
2
GS
4
T
V
= 2.7 V
J
SD
Q
= 150 °C
g
- Source-to-Drain Voltage (V)
0.4
- Total Gate Charge (nC)
4
I
D
Gate Charge
- Drain Current (A)
8
0.6
6
12
0.8
8
T
V
J
GS
= 25 °C
= 4.5 V
16
10
1.0
20
12
1.2
1500
1200
0.15
0.12
0.09
0.06
0.03
0.00
900
600
300
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
D
- 25
C
GS
rss
= 6.2 A
= 4.5 V
4
2
V
V
DS
0
T
GS
J
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
25
Capacitance
8
4
C
50
C
Vishay Siliconix
oss
iss
Si9433BDY
12
I
D
6
75
= 6.2 A
www.vishay.com
100
16
8
125
150
20
10
3