SIE726DF-T1-E3 Vishay, SIE726DF-T1-E3 Datasheet

N-CHANNEL 30-V (D-S) MOSFET W/SCHOTT

SIE726DF-T1-E3

Manufacturer Part Number
SIE726DF-T1-E3
Description
N-CHANNEL 30-V (D-S) MOSFET W/SCHOTT
Manufacturer
Vishay
Datasheet

Specifications of SIE726DF-T1-E3

Minimum Operating Temperature
- 50 C
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0024 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
90 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
35 A
Power Dissipation
5200 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
PolarPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Document Number: 68626
S09-1338-Rev. B, 13-Jul-09
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Package Drawing
www.vishay.com/doc?72945
Top surface is connected to pins 1, 5, 6, and 10
Ordering Information: SiE726DF-T1-E3 (Lead (Pb)-free)
V
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
DS
30
10
D
D
1
(V)
G
G
2
9
0.0033 at V
0.0024 at V
Top View
S
3
S
8
R
N-Channel 30-V (D-S) MOSFET with Schottky Diode
D
DS(on)
SiE726DF-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
4
S
7
GS
GS
(Ω)
= 4.5 V
= 10 V
e
D
5
D
6
J
PolarPAK
= 150 °C)
Silicon
Limit
175
149
6
D
5
I
D
(A)
Package
7
Bottom View
4
a
Limit
60
60
S
d, e
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
8
C
C
A
A
C
A
C
C
A
A
A
3
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C, unless otherwise noted
Q
G
9
g
50 nC
2
(Typ.)
10
D
1
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
DS
GS
D
AS
S
D
FEATURES
APPLICATIONS
stg
• Halogen-free According to IEC 61249-2-21
• SkyFET™ Monolithic TrenchFET
• Ultra Low Thermal Resistance Using Top-
• Leadframe-Based New Encapsulated Package
• Low Q
• 100 % R
• Compliant to RoHS directive 2002/95/EC
• Synchronous Rectification
• DC/DC
• Low-Side Switch
Definition
Power MOSFET and Schottky Diode
Exposed PolarPAK
Sided Cooling
- Die Not Exposed
- Same Layout Regardless of Die Size
gd
/Q
g
and UIS Tested
gs
Ratio Helps Prevent Shoot-Through
60
175 (Silicon Limit)
a
(Package Limit)
- 55 to 150
N-Channel MOSFET
®
4.3
5.2
3.3
Limit
35
28
± 20
125
125
60
60
260
30
80
50
80
Package for Double-
b, c
b, c
b, c
b, c
b, c
a
a
G
www.vishay.com/ppg?68626
For Related Documents
Vishay Siliconix
®
D
S
SiE726DF
www.vishay.com
Schottky Diode
Unit
mJ
°C
W
V
A
1

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SIE726DF-T1-E3 Summary of contents

Page 1

... Top View Top surface is connected to pins and 10 Ordering Information: SiE726DF-T1-E3 (Lead (Pb)-free) SiE726DF-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current ...

Page 2

... SiE726DF Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a, b Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain Top Maximum Junction-to-Case (Source) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 68 °C/W. c. Measured at source pin (on the side of the package). SPECIFICATIONS °C, unless otherwise noted ...

Page 3

... On-Resistance vs. Drain Current and Gate Voltage Total Gate Charge (nC) g Gate Charge Document Number: 68626 S09-1338-Rev. B, 13-Jul- 0.8 1.0 10 000 8000 = 4 6000 = 4000 2000 100 125 SiE726DF Vishay Siliconix 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1 ...

Page 4

... SiE726DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage IDSX IDSX IDSX Temperature (°C) J Reverse Current vs. Junction Temperature Limited by R www.vishay.com 4 0.008 0.006 °C J 0.004 0.002 0.000 0.8 1 ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 68626 S09-1338-Rev. B, 13-Jul-09 140 120 100 100 125 150 25 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper SiE726DF Vishay Siliconix 50 75 100 125 150 T - Case Temperature (°C) C Power Derating, Junction-to-Case www.vishay.com 5 ...

Page 6

... SiE726DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top) ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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