SIE836DF-T1-GE3 Vishay

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SIE836DF-T1-GE3

Manufacturer Part Number

SIE836DF-T1-GE3

Description

N-CHANNEL 200-V (D-S) MOSFET

Manufacturer

Vishay

Series

TrenchFET®r

Specifications of SIE836DF-T1-GE3

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

130 mOhm @ 4.1A, 10V

Drain To Source Voltage (vdss)

200V

Current - Continuous Drain (id) @ 25° C

18.3A

Vgs(th) (max) @ Id

4.5V @ 250µA

Gate Charge (qg) @ Vgs

41nC @ 10V

Input Capacitance (ciss) @ Vds

1200pF @ 100V

Power - Max

104W

Mounting Type

Surface Mount

Package / Case

10-PolarPAK® (SH)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

SIE836DF-T1-GE3TR

Related parts for SIE836DF-T1-GE3

Related keywords

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