ST083S08PFN1 Vishay, ST083S08PFN1 Datasheet - Page 2

• Manufacturer Part Number: ST083S08PFN1
• Description: SILICON CONTROLLED RECTIFIER,800V V(DRM),85A I(T),TO-209AC
• Manufacturer: Vishay

Specifications of ST083S08PFN1

• Breakover Current Ibo Max: 2560 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 30 mA
• Forward Voltage Drop: 2.15 V
• Gate Trigger Voltage (vgt): 3 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 200 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: Stud
• Package / Case: TO-94
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ST083SPbF Series
Vishay High Power Products
www.vishay.com
2
CURRENT CARRYING CAPABILITY
FREQUENCY
50 Hz
400 Hz
1000 Hz
2500 Hz
Recovery voltage V
Voltage before turn-on V
Rise of on-state current dI/dt
Case temperature
Equivalent values for RC circuit
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current at
case temperature
Maximum RMS on-state current
Maximum peak, one half cycle,
non-repetitive surge current
Maximum I
Maximum I
Maximum peak on-state voltage
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope resistance
Maximum holding current
Typical latching current
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
of turned on current
Typical delay time
Maximum turn-off time
2
2
t for fusing
√t for fusing
r
d
210
200
150
For technical questions, contact:
70
50
50
60
180° el
22/0.15
SYMBOL
SYMBOL
V
V
V
I
DRM
T(RMS)
dI/dt
I
I
V
T(TO)1
T(TO)2
T(AV)
I
TSM
I
2
r
r
t
t
I
I
2
TM
t1
t2
H
d
q
√t
L
t
Inverter Grade Thyristors
120
120
(Stud Version), 85 A
I
80
25
50
50
85
TM
T
T
Resistive load, gate pulse: 10 V, 5 Ω source
T
commutating dI/dt = 10 A/μs
V
180° conduction, half sine wave
DC at 77 °C case temperature
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 ms to 10 ms, no voltage reapplied
I
(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I
T
T
TM
J
J
J
R
J
J
= T
= 25 °C, V
= T
= 25 °C, I
= 25 °C, V
= 50 V, t
= 300 A, T
J
J
max., V
maximum, I
T(AV)
T(AV)
330
350
320
220
p
50
60
), T
), T
T
-
DM
A
= 200 μs, dV/dt = 200 V/μs
J
> 30 A
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
T(AV)
T(AV)
[e-mail]
= T
180° el
= 12 V, R
J
J
DRM
= Rated V
= T
= T
22/0.15
TEST CONDITIONS
TEST CONDITIONS
V
J
< I < π x I
< I < π x I
DRM
maximum, t
TM
= Rated V
J
J
maximum
maximum
= 100 A,
RRM
RRM
a
= 6 Ω, I
I
270
210
190
DM
TM
85
50
85
-
T(AV)
T(AV)
, I
DRM
Sinusoidal half wave,
initial T
TM
p
= 10 ms sine wave pulse
), T
), T
G
, I
= 50 A DC, t
= 1 A
TM
J
J
= T
= T
J
= 2 x dI/dt
= T
J
J
2540
1190
630
250
maximum
maximum
50
60
J
-
maximum
100 μs
p
22/0.15
= 1 μs
V
DRM
Document Number: 94334
1930
I
TM
810
400
100
50
85
-
MIN. MAX.
VALUES
10
VALUES
Revision: 25-Nov-09
2450
2560
2060
2160
1000
1.52
2.34
2.15
1.46
2.32
135
600
300
85
85
30
27
21
19
1000
0.80
20
UNITS
W/μF
A/μs
UNITS
°C
kA
A
kA
V
UNITS
mΩ
mA
°C
A
A
V
A/μs
2
2
μs
√s
s