ST103S08PFL1P Vishay, ST103S08PFL1P Datasheet - Page 8

• Manufacturer Part Number: ST103S08PFL1P
• Description: SILICON CONTROLLED RECTIFIER,800V V(DRM),105A I(T),TO-209AC
• Manufacturer: Vishay

Specifications of ST103S08PFL1P

• Breakover Current Ibo Max: 3150 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 30 mA
• Forward Voltage Drop: 1.73 V
• Gate Trigger Voltage (vgt): 3 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 200 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: Stud
• Package / Case: TO-94
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ST103SP Series
Vishay High Power Products
ORDERING INFORMATION TABLE
www.vishay.com
8
Dimensions
Device code
10
6
7
8
9
1
2
3
4
5
ST
1
-
-
-
-
-
-
-
-
-
-
10
2
(gate and aux. cathode leads)
1 = Fast-on terminals
Thyristor
Essential part number
3 = Fast turn-off
S = Compression bonding stud
Voltage code x 100 = V
P = Stud base 1/2"-20UNF-2A
Reapplied dV/dt code (for t
t
0 = Eyelet terminals
Lead (Pb)-free
(gate and aux. cathode leads)
q
For technical questions, contact: [e-mail]
code
3
3
LINKS TO RELATED DOCUMENTS
Inverter Grade Thyristors
(Stud Version), 105 A
S
4
08
5
RRM
q
(see Voltage ratings table)
test conditions)
P
6
F
7
http://www.vishay.com/doc?95003
* Standard part number.
All other types available only on request.
N
8
t
q
(µs)
dV/dt (V/µs) 20
dV/dt - t
0
9
10
12
15
18
20
25
q
combinations available
10
P
CM
CN
CP
CK
CL
-
Document Number: 94365
DM
DN
DP
DK
50 100 200 400
DL
-
EM
Revision: 29-Apr-08
EN
EP
EK
EL
-
FN*
FM
FL*
FP
FK
-
HM
HP
HK
HL
HJ
-