ST110S08P0VPBF Vishay, ST110S08P0VPBF Datasheet - Page 7
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ST110S08P0VPBF
Manufacturer Part Number
ST110S08P0VPBF
Description
SILICON CONTROLLED RECTIFIER,800V V(DRM),110A I(T),TO-209AC
Manufacturer
Vishay
Datasheet
1.ST110S12P0V.pdf
(8 pages)
Specifications of ST110S08P0VPBF
Breakover Current Ibo Max
2830 A
Rated Repetitive Off-state Voltage Vdrm
800 V
Off-state Leakage Current @ Vdrm Idrm
20 mA
Forward Voltage Drop
1.52 V
Gate Trigger Voltage (vgt)
3 V
Maximum Gate Peak Inverse Voltage
5 V
Gate Trigger Current (igt)
150 mA
Holding Current (ih Max)
600 mA
Mounting Style
Stud
Package / Case
TO-94
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
ORDERING INFORMATION TABLE
Document Number: 94393
Revision: 17-Aug-10
Dimensions
Device code
10
1
2
3
4
5
6
7
8
9
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
ST
1
For technical questions within your region, please contact one of the following:
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2
Thyristor
Essential part marking
0 = Converter grade
S = Compression bonding stud
Voltage code x 100 = V
P = Stud base 20UNF threads
0 = Eyelet terminals (gate and auxiliary cathode leads)
1 = Fast-on terminals (gate and auxiliary cathode leads)
2 = Flag terminals (for cathode and gate terminals)
Critical dV/dt:
Lead (Pb)-free
V = Glass-metal seal (only up to 1200 V)
None = Ceramic housing (over 1200 V)
None = 500 V/µs (standard value)
L = 1000 V/µs (special selection)
0
3
Phase Control Thyristors
LINKS TO RELATED DOCUMENTS
(Stud Version), 110 A
S
4
16
5
RRM
(see Voltage Ratings table)
P
6
0
7
DiodesEurope@vishay.com
V
8
www.vishay.com/doc?95078
L
9
Vishay Semiconductors
ST110SPbF Series
PbF
10
www.vishay.com
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