ST1280C04K0 Vishay, ST1280C04K0 Datasheet - Page 2

• Manufacturer Part Number: ST1280C04K0
• Description: SILICON CONTROLLED RECTIFIER,400V V(DRM),2.3kA I(T),TO-200var48
• Manufacturer: Vishay

Specifications of ST1280C04K0

• Scr Type: Standard Recovery
• Voltage - Off State: 400V
• Voltage - Gate Trigger (vgt) (max): 3V
• Voltage - On State (vtm) (max): 1.44V
• Current - On State (it (av)) (max): 2310A
• Current - On State (it (rms)) (max): 4150A
• Current - Gate Trigger (igt) (max): 200mA
• Current - Hold (ih) (max): 600mA
• Current - Off State (max): 100mA
• Current - Non Rep. Surge 50, 60hz (itsm): 42500A, 44500A
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: TO-200AC, K-PUK, A-24
• Current - On State (it (rms) (max): 4150A
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *ST1280C04K0; VS-ST1280C04K0; VS-ST1280C04K0; VSST1280C04K0; VSST1280C04K0

Document Number: 93718
ST1280C..K Series
Bulletin I25195 rev. B 02/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Switching
On-state Conduction
t
t
di/dt
I
I
I
I
I
V
V
r
r
V
I
I
d
q
T(AV)
T(RMS)
TSM
H
L
ST1280C..K
2
2
t1
t2
Type number
T(TO)
T(TO)
TM
t
√t
1
2
Parameter
Parameter
Typical delay time
Typical turn-off time
Max. non-repetitive rate of rise
of turned-on current
Max. average on-state current
@ Heatsink temperature
Max. RMS on-state current
Max. peak, one-cycle
non-repetitive surge current
Maximum I
Maximum I
Low level value of threshold
voltage
High level value of threshold
voltage
Low level value of on-state
slope resistance
High level value of on-state
slope resistance
Max. on-state voltage
Maximum holding current
Typical latching current
Voltage
Code
2
2
t for fusing
√t for fusing
04
06
V
peak and off-state voltage
DRM
/V
RRM
ST1280C..K
ST1280C..K
, max. repetitive
400
600
2310 (885)
V
55 (85)
35700
37400
90270
1000
42500
44500
0.077
0.068
4150
9027
8241
6383
5828
1000
1.44
200
0.83
0.90
600
1.9
KA
Units Conditions
Units Conditions
A/µs
KA
mΩ
mA
µs
°C
A
A
V
V
2
2
√s
s
Gate drive 20V, 20Ω, t
T
Gate current 1A, di
V
I
dv/dt = 20V/µs, Gate 0V 100Ω, t
(16.7% x π x I
(I > π x I
180° conduction, half sine wave
double side (single side) cooled
@ 25°C heatsink temperature double side cooled
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 0.1 to 10ms, no voltage reapplied
(I > π x I
I
T
TM
(16.7% x π x I
pk
J
d
J
repetitive peak voltage
= T
= 8000A, T
V
= 0.67% V
= 550A, T
= 25°C, anode supply 12V resistive load
RSM
J
max, anode voltage ≤ 80% V
T(AV)
, maximum non-
T(AV)
),T
500
700
No voltage
100% V
No voltage
reapplied
100% V
reapplied
),T
reapplied
reapplied
J
DRM
V
T(AV)
J
T(AV)
= T
J
J
= T
= T
, T
= T
J
J
< I < π x I
g
< I < π x I
J
max, di/dt = 40A/µs, V
/dt = 1A/µs
J
max, t
J
RRM
RRM
= 25°C
max.
max.
r
≤ 1µs
p
Sinusoidal half wave,
= 10ms sine pulse
Initial T
T(AV)
T(AV)
p
), T
), T
www.vishay.com
= 500µs
I
J
DRM
J
@ T
J
= T
= T
DRM
= T
/I
J
J
J
J
100
RRM
mA
max.
R
= T
max.
max.
= 50V
J
max.
max
2