ST173C12CFK1 Vishay, ST173C12CFK1 Datasheet - Page 2

• Manufacturer Part Number: ST173C12CFK1
• Description: SILICON CONTROLLED RECTIFIER,1.2kV V(DRM),330A I(T),TO-200AB
• Manufacturer: Vishay

Specifications of ST173C12CFK1

• Rated Repetitive Off-state Voltage Vdrm: 1200 V
• Off-state Leakage Current @ Vdrm Idrm: 40 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: SMD/SMT
• Package / Case: TO-200AB
• Breakover Current Ibo Max: 4900 A
• Gate Trigger Current (igt): 200 mA
• Gate Trigger Voltage (vgt): 3 V
• Repetitive Peak Forward Blocking Voltage: 1200 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ST173CPBF Series
Vishay High Power Products
www.vishay.com
2
CURRENT CARRYING CAPABILITY
FREQUENCY
50 Hz
400 Hz
1000 Hz
2500 Hz
Recovery voltage V
Voltage before turn-on V
Rise of on-state current dI/dt
Heatsink temperature
Equivalent values for RC circuit
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current
Maximum peak, one half cycle,
non-repetitive surge current
Maximum I
Maximum I
Maximum peak on-state voltage
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope resistance
Maximum holding current
Typical latching current
SWITCHING
PARAMETER
Maximum non-repetitive rate
of rise of turned on current
Typical delay time
Maximum turn-off time
2
2
t for fusing
√t for fusing
r
d
maximum
minimum
For technical questions, contact: [e-mail]
760
730
600
350
40
SYMBOL
SYMBOL
V
V
I
180° el
I
T(RMS)
dI/dt
(Hockey PUK Version), 330 A
I
T(AV)
V
T(TO)1
T(TO)2
I
TSM
I
2
r
r
t
t
I
I
47/0.22
2
TM
t1
t2
d
q
H
L
√t
t
V
Inverter Grade Thyristors
50
DRM
50
660
590
490
270
T
T
Resistive load, gate pulse: 10 V, 5 Ω source
T
I
V
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 to 10 ms, no voltage reapplied
I
t
(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I
T
T
I
55
TM
TM
TM
p
J
J
J
R
J
J
= 10 ms sine wave pulse
= T
= 25 °C, V
= T
= 25 °C, I
= 25 °C, V
= 50 V, t
= 300 A, commutating dI/dt = 20 A/µs
= 600 A, T
J
J
maximum, V
maximum,
T(AV)
T(AV)
p
T
), T
), T
DM
A
= 500 µs, dV/dt: See table in device code
> 30 A
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
J
1200
1260
1200
T(AV)
T(AV)
850
= 12 V, R
40
= T
J
J
= Rated V
TEST CONDITIONS
TEST CONDITIONS
= T
= T
180° el
J
< I < π x I
< I < π x I
DRM
maximum,
47/0.22
J
J
V
maximum
maximum
RRM
RRM
50
DRM
-
= Rated V
a
= 6 Ω, I
DRM
T(AV)
T(AV)
1030
1080
1030
Sinusoidal half wave,
initial T
I
, I
720
TM
55
TM
), T
), T
G
DRM
= 50 A DC, t
= 1 A
J
J
J
= T
= T
= T
, I
TM
J
J
J
maximum
maximum
maximum
= 2 x dI/dt
5570
2800
1620
800
40
p
= 1 µs
100 µs
47/0.22
V
Document Number: 94366
50
DRM
-
330 (120)
VALUES
VALUES
55 (85)
Revision: 29-Apr-08
4920
2460
1390
1000
I
4680
4900
3940
4120
1100
1000
680
2.07
1.55
1.61
0.87
0.77
TM
610
110
100
600
1.1
55
15
30
77
71
UNITS
UNITS
UNITS
kA
Ω/µF
A/µs
A/µs
kA
mΩ
mA
µs
°C
°C
A
V
A
A
V
2
2
√s
s