ST223C08CFL1 Vishay, ST223C08CFL1 Datasheet - Page 2

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ST223C08CFL1

Manufacturer Part Number
ST223C08CFL1
Description
SILICON CONTROLLED RECTIFIER,800V V(DRM),390A I(T),TO-200AB
Manufacturer
Vishay
Datasheet

Specifications of ST223C08CFL1

Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Document Number: 93672
ST223C..C Series
Bulletin I25174 rev. B 04/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Current Carrying Capability
On-state Conduction
50Hz
400Hz
1000Hz
2500Hz
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state current di/dt
Heatsink temperature
Equivalent values for RC circuit
I
I
I
I
I
ST223C..C
T(AV)
T(RMS)
TSM
2
2
Type number
Frequency
t
√t
Parameter
Max. average on-state current
@ Heatsink temperature
Max. RMS on-state current
Max. peak, one half cycle,
non-repetitive surge current
Maximum I
Maximum I
Voltage
Code
2
2
t for fusing
√t for fusing
04
08
repetitive peak voltage
V
780
490
930
910
40
DRM
50
50
47Ω / 0.22µF
180
/V
o
V
el
RRM
DRM
400
800
ST223C..C
V
390 (150)
, maximum
55 (85)
5850
6130
4920
5150
1710
745
171
156
121
110
770
650
400
800
I
50
50
55
TM
Units Conditions
KA
KA
1430
1490
1430
1070
°C
A
A
50
40
47Ω / 0.22µF
2
-
2
√s
s
180
V
o
non-repetitive peak voltage
180° conduction, half sine wave
double side (single side) cooled
DC @ 25°C heatsink temperature double side cooled
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 0.1 to 10ms, no voltage reapplied
el
DRM
I
V
TM
1220
1300
1260
920
50
55
RSM
-
, maximum
No voltage
No voltage
reapplied
100% V
reapplied
reapplied
100% V
reapplied
500
900
V
RRM
RRM
5870
3120
1880
1000
40
50
47Ω / 0.22µF
-
100µs
V
DRM
Sinusoidal half wave,
Initial T
www.vishay.com
I
TM
5240
2740
1640
860
I
J
50
55
DRM
@ T
-
= T
/I
J
J
max
RRM
= T
40
mA
J
Units
A/µs
max.
max.
°C
V
A
2

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