ST223C08CFN1 Vishay, ST223C08CFN1 Datasheet - Page 7

• Manufacturer Part Number: ST223C08CFN1
• Description: SILICON CONTROLLED RECTIFIER,800V V(DRM),390A I(T),TO-200AB
• Manufacturer: Vishay

Specifications of ST223C08CFN1

• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 40 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: SMD/SMT
• Package / Case: TO-200AB
• Breakover Current Ibo Max: 6130 A
• Gate Trigger Current (igt): 200 mA
• Gate Trigger Voltage (vgt): 3 V
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 93672
Revision: 14-May-08
1 E 5
1 E 4
1 E 3
1 E 2
1 E 1
1 E 1
tp
ST223 C ..C Se ries
Sinuso id al p ulse
0.1
1 E 2
0. 2
P u lse B a se w idt h (µ s)
0 .3
0.5
1 0 0
0 .1
1 0
0 .0 0 1
1
1
a ) R e c o m m e n d e d lo a d lin e fo r
b ) Re c o m m e n d e d lo a d lin e f o r
Re c t a n g ula r g a t e p u lse
2
t r< =1 µ s
< = 3 0 % ra te d d i/d t : 1 0 V , 1 0 o h m s
4
ra t e d d i/d t : 2 0 V , 1 0 o h m s; t r< =1 µ s
For technical questions, contact: [e-mail]
10
Fig. 16 - Maximum On-State Energy Power Loss Characteristics
1 E 3
2 0 jo ules per pulse
(Hockey PUK Version), 390 A
Inverter Grade Thyristors
0 .0 1
V G D
IG D
1 E 4
Fig. 17 - Gate Characteristics
D e v ic e : ST 2 2 3 C ..C Se rie s Fre q u e n c y L im ite d b y P G (A V )
In sta n t a n e o u s G at e C u rr e n t (A )
0 .1
( b )
( a )
1
1 E 1
( 1 ) P G M = 1 0 W , t p = 2 0 m s
( 2 ) P G M = 2 0 W , t p = 1 0 m s
( 3 ) P G M = 4 0 W , t p = 5 m s
( 4 ) P G M = 6 0 W , t p = 3 .3 m s
tp
Vishay High Power Products
ST22 3C. .C Se ries
Re cta ngular pulse
di/d t = 5 0A/µs
1 0
( 1 )
1 E 2
0 .1
P u lse B ase w id t h (µ s)
( 2 )
0. 2
ST223C..C Series
(3 )
0. 3
( 4 )
0.5
1 0 0
1
2
5
1 E 3
10
20 jo ule s p er pulse
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1 E 4
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