ST300S20P0PBF Vishay, ST300S20P0PBF Datasheet - Page 6

• Manufacturer Part Number: ST300S20P0PBF
• Description: SILICON CONTROLLED RECTIFIER,2kV V(DRM),300A I(T),TO-209AE
• Manufacturer: Vishay

Specifications of ST300S20P0PBF

• Scr Type: Standard Recovery
• Voltage - Off State: 2000V
• Voltage - Gate Trigger (vgt) (max): 3V
• Voltage - On State (vtm) (max): 1.66V
• Current - On State (it (av)) (max): 300A
• Current - On State (it (rms)) (max): 470A
• Current - Gate Trigger (igt) (max): 200mA
• Current - Hold (ih) (max): 600mA
• Current - Off State (max): 50mA
• Current - Non Rep. Surge 50, 60hz (itsm): 8000A, 8380A
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: TO-209AE, TO-118
• Current - On State (it (rms) (max): 470A
• Breakover Current Ibo Max: 8380 A
• Rated Repetitive Off-state Voltage Vdrm: 2000 V
• Off-state Leakage Current @ Vdrm Idrm: 50 mA
• Forward Voltage Drop: 1.66 V
• Gate Trigger Voltage (vgt): 3 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 200 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: Stud
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: VS-ST300S20P0PBF; VS-ST300S20P0PBF; VSST300S20P0PBF; VSST300S20P0PBF

ST300SPbF Series
Vishay High Power Products
ORDERING INFORMATION TABLE
www.vishay.com
6
Dimensions
Device code
1
2
3
4
5
6
7
8
9
100
0.1
ST
10
0.001
1
1
R ectangular gate pulse
a) R ecommended load line for
b) R ecommended load line for
-
-
-
-
-
-
-
-
-
tr<=1 µs
<=30% rated di/ dt : 10V, 10ohms
rated di/ dt : 20V, 10ohms; tr<=1 µs
For technical questions, contact: [e-mail]
30
2
Thyristor
Essential part number
0 = Converter grade
S = Compression bonding stud
Voltage code x 100 = V
P = Stud base 3/4" 16UNF-2A threads
M = Stud base metric threads (M24 x 1.5)
0 = Eyelet terminals (gate and auxiliary cathode leads)
1 = Fast-on terminals (gate and auxiliary cathode leads)
3 = Threaded top terminal 3/8" 24UNF-2A
Critical dV/dt:
Lead (Pb)-free
VGD
0.01
IGD
LINKS TO RELATED DOCUMENTS
Phase Control Thyristors
0
3
(Stud Version), 300 A
Device: S T 300S S eries
Fig. 9 - Gate Characteristics
S
4
Instantaneous Gate Current (A)
None = 500 V/µs (standard value)
L = 1000 V/µs (special selection)
0.1
20
5
(b)
RRM
(see Voltage Ratings table)
(a)
P
6
1
Frequency Limited by PG(AV)
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
0
7
http://www.vishay.com/doc?95084
10
8
-
(1)
(2) (3)
PbF
9
(4)
100
Document Number: 94406
Revision: 11-Aug-08