ST303C12LFK1L Vishay, ST303C12LFK1L Datasheet - Page 3

• Manufacturer Part Number: ST303C12LFK1L
• Description: SILICON CONTROLLED RECTIFIER,1.2kV V(DRM),515A I(T),TO-200AC
• Manufacturer: Vishay

Specifications of ST303C12LFK1L

• Rated Repetitive Off-state Voltage Vdrm: 1200 V
• Off-state Leakage Current @ Vdrm Idrm: 50 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: SMD/SMT
• Package / Case: TO-200AC
• Breakover Current Ibo Max: 8320 A
• Gate Trigger Current (igt): 200 mA
• Gate Trigger Voltage (vgt): 3 V
• Repetitive Peak Forward Blocking Voltage: 1200 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Note
(1)
Document Number: 94373
Revision: 25-Jul-08
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
of turned on current
Typical delay time
Maximum turn-off time
BLOCKING
PARAMETER
Maximum critical rate of rise of off-state voltage
Maximum peak reverse and off-state leakage current
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
Maximum DC gate currrent required to trigger
Maximum DC gate voltage required to trigger
Maximum DC gate current not to trigger
Maximum DC gate voltage not to trigger
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to heatsink
Maximum thermal resistance, case to heatsink
Mounting force, ± 10 %
Approximate weight
Case style
t
q
= 10 to 20 µs for 400 to 800 V devices; t
(1)
maximum
minimum
For technical questions, contact: [e-mail]
SYMBOL
q
dI/dt
= 15 to 30 µs for 1000 to 1200 V devices
t
t
d
q
Inverter Grade Thyristors
(PUK Version), 620 A
T
I
T
Resistive load, gate pulse: 10 V, 5 Ω source
T
I
V
TM
TM
SYMBOL
SYMBOL
SYMBOL
J
J
J
R
R
P
+ V
R
- V
= T
= 25 °C, V
= T
dV/dt
I
I
P
V
= 50 V, t
RRM
V
T
thC-hs
= 2 x dI/dt
= 550 A, commutating dI/dt = 40 A/µs
DRM
G(AV)
I
I
I
thJ-hs
GM
T
GT
GD
GM
GD
Stg
GT
GM
J
GM
J
J
,
maximum, V
maximum,
p
DM
= 500 µs, dV/dt: See table in device code
T
T
T
T
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
See dimensions - link at the end of datasheet
T
higher value available on request
T
J
J
J
J
J
J
= Rated V
= T
= T
= 25 °C, V
= T
= T
= T
TEST CONDITIONS
DRM
J
J
J
J
J
maximum, f = 50 Hz, d% = 50
maximum, t
maximum, rated V
maximum, linear to 80 % V
maximum, rated V
= Rated V
DRM
TEST CONDITIONS
TEST CONDITIONS
TEST CONDITIONS
A
= 12 V, R
, I
TM
p
DRM
Vishay High Power Products
= 50 A DC, t
≤ 5 ms
a
= 6 Ω
DRM
DRM
/V
applied
ST303CPbF Series
RRM
p
= 1 µs
DRM
applied
,
- 40 to 125
- 40 to 150
TO-200AB (E-PUK)
VALUES
VALUES
VALUES
VALUES
(1000)
0.020
0.010
9800
1000
0.25
0.09
0.04
0.83
500
200
50
60
10
10
20
20
83
10
30
5
3
www.vishay.com
UNITS
UNITS
UNITS
UNITS
V/µs
A/µs
K/W
(kg)
mA
mA
mA
°C
µs
W
A
V
V
V
N
g
3