ST700C12L1 Vishay, ST700C12L1 Datasheet - Page 6

• Manufacturer Part Number: ST700C12L1
• Description: SILICON CONTROLLED RECTIFIER,1.2kV V(DRM),910A I(T),TO-200AC
• Manufacturer: Vishay

Specifications of ST700C12L1

• Rated Repetitive Off-state Voltage Vdrm: 1200 V
• Off-state Leakage Current @ Vdrm Idrm: 80 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: SMD/SMT
• Package / Case: TO-200AC
• Breakover Current Ibo Max: 16400 A
• Gate Trigger Current (igt): 200 mA
• Gate Trigger Voltage (vgt): 3 V
• Repetitive Peak Forward Blocking Voltage: 1200 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ST700CLPbF Series
Vishay High Power Products
ORDERING INFORMATION TABLE
www.vishay.com
6
Dimensions
Device code
100
0.1
10
0.001
1
1
2
3
4
5
6
7
8
9
R ectangular gate pulse
a) R ecommended load line for
b) R ecommended load line for
ST
1
<=30% rated di/ dt : 10V, 10ohms
tr<=1 µs
rated di/ dt : 20V, 10ohms; tr<=1 µs
-
-
-
-
-
-
-
-
-
For technical questions, contact: [e-mail]
70
VGD
2
Thyristor
Essential part number
0 = Converter grade
C = Ceramic PUK
Voltage code x 100 = V
L = PUK case TO-200AC (B-PUK)
0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads)
1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads)
2 = Eyelet terminals (gate and auxiliary cathode soldered leads)
3 = Fast-on terminals (gate and auxiliary cathode soldered leads)
Critical dV/dt:
Lead (Pb)-free
0.01
IGD
(Hockey PUK Version), 910 A
0
LINKS TO RELATED DOCUMENTS
3
Phase Control Thyristors
Device: S T 700C..L S eries
Fig. 11 - Gate Characteristics
Instantaneous Gate Current (A)
C
4
None = 500 V/µs (standard selection)
L = 1000 V/µs (special selection)
0.1
20
5
(b)
RRM
(see Voltage Ratings table)
L
(a)
6
1
Frequenc y Limited by PG(AV)
1
7
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
http://www.vishay.com/doc?95076
8
-
10
(1)
PbF
9
(2) (3)
(4)
100
Document Number: 94413
Revision: 11-Aug-08