ST733C04LFL1 Vishay, ST733C04LFL1 Datasheet - Page 2
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ST733C04LFL1
Manufacturer Part Number
ST733C04LFL1
Description
SILICON CONTROLLED RECTIFIER,400V V(DRM),940A I(T),TO-200AC
Manufacturer
Vishay
Datasheet
1.ST733C08LFL0.pdf
(9 pages)
Specifications of ST733C04LFL1
Rated Repetitive Off-state Voltage Vdrm
400 V
Off-state Leakage Current @ Vdrm Idrm
75 mA
Holding Current (ih Max)
600 mA
Mounting Style
SMD/SMT
Package / Case
TO-200AC
Breakover Current Ibo Max
20950 A
Gate Trigger Current (igt)
200 mA
Gate Trigger Voltage (vgt)
3 V
Repetitive Peak Forward Blocking Voltage
400 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
ST733CLPbF Series
Vishay High Power Products
www.vishay.com
2
CURRENT CARRYING CAPABILITY
FREQUENCY
50 Hz
400 Hz
1000 Hz
2500 Hz
Recovery voltage V
Voltage before turn-on V
Rise of on-state current dI/dt
Heatsink temperature
Equivalent values for RC circuit
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state
current at heatsink temperature
Maximum RMS on-state current
Maximum peak, one half cycle,
non-repetitive surge current
Maximum I
Maximum I
Maximum peak on-state voltage
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope resistance
Maximum holding current
Typical latching current
2
2
t for fusing
√t for fusing
R
D
For technical questions, contact: ind-modules@vishay.com
2200
2050
1370
500
40
SYMBOL
180° el
V
V
I
I
T(RMS)
I
T(AV)
V
T(TO)1
T(TO)2
(Hockey PUK Version), 940 A
TSM
10/0.47
I
I
r
r
I
I
2
2
TM
t1
t2
H
L
V
t
√t
Inverter Grade Thyristors
50
DRM
50
1900
1660
1070
370
55
I
TM
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 to 10 ms, no voltage reapplied
I
t
(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I
T
T
TM
p
J
J
= 10 ms sine wave pulse
= 25 °C, I
= 25 °C, V
= 1700 A, T
T(AV)
T(AV)
3580
3600
2900
1220
T
), T
), T
A
40
> 30 A
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
T(AV)
T(AV)
= 12 V, R
J
J
J
180° el
TEST CONDITIONS
= T
= T
= T
10/0.47
V
< I < π x I
< I < π x I
J
50
DRM
J
J
-
maximum,
maximum
maximum
RRM
RRM
a
= 6 Ω, I
3100
3130
2450
980
I
55
TM
T(AV)
T(AV)
Sinusoidal half wave,
initial T
), T
), T
G
= 1 A
J
J
J
= T
= T
= T
6800
3750
2120
J
J
J
960
40
maximum
maximum
maximum
100 µs
10/0.47
V
50
DRM
-
Document Number: 94378
5920
3240
1780
770
I
55
TM
940 (350)
VALUES
55 (85)
Revision: 11-Aug-08
20 000
20 950
16 800
17 600
20 000
1900
2000
1820
1410
1290
1000
1.63
1.09
1.20
0.32
0.29
600
UNITS
Ω/µF
A/µs
°C
UNITS
A
V
kA
kA
mΩ
mA
°C
A
A
V
2
2
s
√s