ST733C08LFM0 Vishay, ST733C08LFM0 Datasheet - Page 7

• Manufacturer Part Number: ST733C08LFM0
• Description: SILICON CONTROLLED RECTIFIER,800V V(DRM),940A I(T),TO-200AC
• Manufacturer: Vishay

Specifications of ST733C08LFM0

• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 75 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: SMD/SMT
• Package / Case: TO-200AC
• Breakover Current Ibo Max: 20950 A
• Gate Trigger Current (igt): 200 mA
• Gate Trigger Voltage (vgt): 3 V
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 94378
Revision: 11-Aug-08
1E5
1E4
1E3
1E2
1E1
1E5
1E4
1E3
1E2
1E1
1E1
Snubber circu it
R = 10 oh ms
C = 0.47 µF
V = 80% V
s
s
D
5000
tp
3000
DRM
S T 733C..L S eries
S inusoidal pulse
2500
1E2
1E2
Pulse Basewidth (µs)
2000
0.3
Pulse Basewidth (µs)
1500
0.4
0.5
100
1000
0.1
10
0.001
1
1
2
a) Recommen ded load line for
Rectangular gate pulse
b) Recommen ded load line for
500
3
<= 30% rated di/ dt : 10V, 10ohms
tr<=1 µs
rated di/ dt : 20V, 10ohms; tr<=1 µs
5
400
10
1E3
1E3
For technical questions, contact: [e-mail]
Fig. 16 - Maximum On-State Energy Power Loss Characteristics
20 joules per pulse
ST733C ..L Series
Trapez oidal pu lse
T = 40°C
di/ dt = 100A/µs
200
C
(Hockey PUK Version), 940 A
0.01
100
Inverter Grade Thyristors
VGD
50 Hz
Fig. 15 - Frequency Characteristics
IGD
Fig. 17 - Gate Characteristics
1E4
1E4
Instantaneous Gate C urrent (A)
Device: ST733C.. L Series
0.1
(b)
(a)
1E1
1E 1
1
Snu bber circu it
R = 10 oh ms
C = 0.47 µF
V = 80% V
s
s
D
tp
Frequ ency Limited by PG(AV)
3000
Vishay High Power Products
(1) PGM = 10W, tp = 20ms
(2) PGM = 20W, tp = 10ms
(3) PGM = 40W, tp = 5ms
(4) PGM = 60W, tp = 3.3ms
DRM
S T 733C..L S eries
Rectangula r pulse
di/ dt = 50A/ µs
2500
10
1E2
1E2
(1)
ST733CLPbF Series
2000
Pulse Basewidth (µs)
Pulse Basewidth (µs)
0.3
1500
(2)
0.4
1000
0.5
(3)
1
(4)
500
2
100
tp
3
5
400
1E3
1E3
10
20 joules per pulse
ST733C ..L Series
Trapez oidal pu lse
T = 55°C
di/ dt = 100A/µs
200
C
100
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50 Hz
1E4
1E 4
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