ST733C08LFM1 Vishay, ST733C08LFM1 Datasheet - Page 2

• Manufacturer Part Number: ST733C08LFM1
• Description: SILICON CONTROLLED RECTIFIER,800V V(DRM),940A I(T),TO-200AC
• Manufacturer: Vishay

Specifications of ST733C08LFM1

• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 75 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: SMD/SMT
• Package / Case: TO-200AC
• Breakover Current Ibo Max: 20950 A
• Gate Trigger Current (igt): 200 mA
• Gate Trigger Voltage (vgt): 3 V
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ST733CLPbF Series
Vishay High Power Products
www.vishay.com
2
CURRENT CARRYING CAPABILITY
FREQUENCY
50 Hz
400 Hz
1000 Hz
2500 Hz
Recovery voltage V
Voltage before turn-on V
Rise of on-state current dI/dt
Heatsink temperature
Equivalent values for RC circuit
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state
current at heatsink temperature
Maximum RMS on-state current
Maximum peak, one half cycle,
non-repetitive surge current
Maximum I
Maximum I
Maximum peak on-state voltage
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope resistance
Maximum holding current
Typical latching current
2
2
t for fusing
√t for fusing
R
D
For technical questions, contact: [e-mail]
2200
2050
1370
500
40
SYMBOL
180° el
V
V
I
I
T(RMS)
I
T(AV)
V
T(TO)1
T(TO)2
(Hockey PUK Version), 940 A
TSM
10/0.47
I
I
r
r
I
I
2
2
TM
t1
t2
H
L
V
t
√t
Inverter Grade Thyristors
50
DRM
50
1900
1660
1070
370
55
I
TM
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 to 10 ms, no voltage reapplied
I
t
(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I
T
T
TM
p
J
J
= 10 ms sine wave pulse
= 25 °C, I
= 25 °C, V
= 1700 A, T
T(AV)
T(AV)
3580
3600
2900
1220
T
), T
), T
A
40
> 30 A
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
T(AV)
T(AV)
= 12 V, R
J
J
J
180° el
TEST CONDITIONS
= T
= T
= T
10/0.47
V
< I < π x I
< I < π x I
J
50
DRM
J
J
-
maximum,
maximum
maximum
RRM
RRM
a
= 6 Ω, I
3100
3130
2450
980
I
55
TM
T(AV)
T(AV)
Sinusoidal half wave,
initial T
), T
), T
G
= 1 A
J
J
J
= T
= T
= T
6800
3750
2120
J
J
J
960
40
maximum
maximum
maximum
100 µs
10/0.47
V
50
DRM
-
Document Number: 94378
5920
3240
1780
770
I
55
TM
940 (350)
VALUES
55 (85)
Revision: 11-Aug-08
20 000
20 950
16 800
17 600
20 000
1900
2000
1820
1410
1290
1000
1.63
1.09
1.20
0.32
0.29
600
UNITS
Ω/µF
A/µs
°C
UNITS
A
V
kA
kA
mΩ
mA
°C
A
A
V
2
2
s
√s