TSFF6210 Vishay, TSFF6210 Datasheet - Page 2

• Manufacturer Part Number: TSFF6210
• Description: IR EMITTER DH 870NM 5MM 10DEG-e2
• Manufacturer: Vishay

Specifications of TSFF6210

• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TSFF6210
Vishay Semiconductors
Note
T
www.vishay.com
2
amb
BASIC CHARACTERISTICS
PARAMETER
Forward voltage
Temperature coefficient of V
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of φ
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of λ
Rise time
Fall time
Cut-off frequency
Virtual source diameter
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
= 25 °C, unless otherwise specified
21142
200
180
160
140
120
100
80
60
40
20
0
0
10 20
T
amb
R
thJA
- Ambient Temperature (°C)
30 40 50 60 70 80 90 100
= 230 K/W
e
p
F
For technical questions, contact:
I
High Speed Infrared Emitting Diode,
DC
V
I
I
I
R
F
F
F
870 nm, GaAlAs Double Hetero
= 70 mA, I
I
I
= 0 V, f = 1 MHz, E = 0
TEST CONDITION
= 100 mA, t
= 100 mA, t
= 100 mA, t
F
F
= 1 A, t
= 1 A, t
I
I
I
I
I
I
F
F
F
F
F
F
I
V
F
= 100 mA
= 100 mA
= 100 mA
= 100 mA
= 100 mA
= 100 mA
R
= 1 mA
= 5 V
p
p
AC
= 100 µs
= 100 µs
p
p
p
= 30 mA pp
= 20 ms
= 20 ms
= 20 ms
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SYMBOL
TK
TKφ
TKλ
Fig. 2 - Forward Current Limit vs. Ambient Temperature
Δλ
V
V
C
φ
λ
I
I
I
ϕ
f
t
t
d
R
e
e
r
c
e
p
f
F
F
VF
j
21143
e
p
120
100
80
60
40
20
0
0
MIN.
10
90
T
amb
20 30 40
R
thJA
- Ambient Temperature (°C)
= 230 K/W
- 0.35
TYP.
1800
- 1.8
± 10
0.25
125
180
870
1.5
2.3
3.7
50
40
15
15
24
50 60 70 80
Document Number: 81352
MAX.
450
1.8
3.0
10
Rev. 1.1, 29-Jun-09
90 100
mW/sr
mW/sr
mV/K
UNIT
nm/K
MHz
mW
%/K
deg
mm
nm
nm
µA
pF
ns
ns
V
V