TSHG6410 Vishay, TSHG6410 Datasheet - Page 4

IR EMITTER DH 850NM 5MM 22DEG-e2

TSHG6410

Manufacturer Part Number
TSHG6410
Description
IR EMITTER DH 850NM 5MM 22DEG-e2
Manufacturer
Vishay
Datasheet

Specifications of TSHG6410

Radiant Intensity
90 mW/sr
Maximum Forward Current
100 mA
Maximum Power Dissipation
180 mW
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Operating Voltage
5 V
Wavelength
850 nm
Package / Case
T-1 3/4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TSHG6410
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
TSHG6410
Quantity:
70 000
TSHG6410
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
www.vishay.com
4
Drawing-No.: 6.544-5259.11-4
Issue: 2; 19.05.09
21809
0.5
+ 0.15
- 0.05
A
For technical questions, contact:
High Speed Infrared Emitting Diode,
2.54 nom.
0.6
C
850 nm, GaAlAs Double Hetero
+ 0.2
- 0.1
emittertechsupport@vishay.com
0.5
Ø 5 ± 0.15
+ 0.15
Area not plane
- 0.05
R 2.49 (sphere)
technical drawings
according to DIN
specifications
Document Number: 81870
Rev. 1.2, 08-Jul-09

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