VSKEL240-10S10 Vishay, VSKEL240-10S10 Datasheet - Page 9

• Manufacturer Part Number: VSKEL240-10S10
• Description: 1000V Fast Recovery Diode MAGN-A-Pak
• Manufacturer: Vishay

Specifications of VSKEL240-10S10

• Voltage - Forward (vf) (max) @ If: 1.57V @ 800A
• Current - Reverse Leakage @ Vr: 50mA @ 1000V
• Current - Average Rectified (io) (per Diode): 250A
• Voltage - Dc Reverse (vr) (max): 1000V (1kV)
• Reverse Recovery Time (trr): 1µs
• Diode Type: Standard
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Diode Configuration: Single
• Mounting Type: Chassis Mount
• Package / Case: 3-MAGN-A-PAK™
• Product: Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 1000 V
• Forward Voltage Drop: 1.57 V at 800 A
• Recovery Time: 1000 ns
• Forward Continuous Current: 250 A
• Max Surge Current: 8400 A
• Reverse Current Ir: 50000 uA
• Mounting Style: Screw
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRKEL240-10S10; IRKEL240-10S10; IRKEL240-10S10

ORDERING INFORMATION TABLE
Document Number: 93164
Revision: 16-Jul-10
1E 5
1E 4
1E 3
1E 2
1E 1
tp
Device code
VSK.L240..S 30
T rapezoidal Pulse
T = 90 °C
0.0001
C
0.001
5000
0.01
[e-mail], [e-mail],
0.1
1E 2
0.0001
VSKDL240, VSKCL240, VSKJL240, VSKEL240 Series
Pulse Basewidth (µs)
1
For technical questions within your region, please contact one of the following:
2500
S tead y S tate Value:
R
(DC Operation)
thJC
1500
= 0.125 K/ W
6
1
2
3
4
5
VSK
1000
0.001
1
Fig. 27 - Thermal Impedance Z
1E 3
(MAGN-A-PAK Power Modules)
-
-
-
-
-
-
400
Fast Recovery Diodes, 250 A
D
2
Module type
Circuit configuration (see Circuit Configuration table)
L = Fast recovery diode
Current rating
Voltage code x 100 = V
t
Fig. 26 - Frequency Characteristics
rr
200
code (see Recovery Characteristics table)
S quare Wave Pulse Duration (s)
0.01
50 Hz
L
3
1E 4
240
0.1
4
thJC
-
VSK.L240.. S eries
Per Junction
RRM
1E1
Characteristics
1
(see Voltage Ratings table)
[e-mail]
25
tp
5
VSK.L240..S 30
T rapezoidal Pulse
T = 100 °C
S30
C
6
10
5000
1E 2
Pulse Basewidth (µs)
Vishay Semiconductors
2500
1500
100
1000
1E3
400
S10 = 1000 ns
S20 = 2000 ns
S30 = 3000 ns
200
www.vishay.com
50 Hz
1E 4
9