VSKEL240-12S20 Vishay, VSKEL240-12S20 Datasheet - Page 3

• Manufacturer Part Number: VSKEL240-12S20
• Description: 1200V Fast Recovery Diode MAGN-A-Pak
• Manufacturer: Vishay

Specifications of VSKEL240-12S20

• Voltage - Forward (vf) (max) @ If: 1.57V @ 800A
• Current - Reverse Leakage @ Vr: 50mA @ 1200V
• Current - Average Rectified (io) (per Diode): 250A
• Voltage - Dc Reverse (vr) (max): 1200V (1.2kV)
• Reverse Recovery Time (trr): 2µs
• Diode Type: Standard
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Diode Configuration: Single
• Mounting Type: Chassis Mount
• Package / Case: 3-MAGN-A-PAK™
• Product: Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 1200 V
• Forward Voltage Drop: 1.57 V at 800 A
• Recovery Time: 2000 ns
• Forward Continuous Current: 250 A
• Max Surge Current: 8400 A
• Reverse Current Ir: 50000 uA
• Mounting Style: Screw
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRKEL240-12S20; IRKEL240-12S20; IRKEL240-12S20

Note
• The table above shows the increment of thermal resistance R
Document Number: 93164
Revision: 16-Jul-10
RECOVERY CHARACTERISTICS
CODE
S10
S20
S30
BLOCKING
PARAMETER
Maximum peak reverse leakage current
RMS insulation voltage
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating and
storage temperature range
Maximum internal thermal resistance,
junction to case per junction
Thermal resistance,
case to heatsink per module
Mounting torque ± 10 %
Approximate weight
Case style
R CONDUCTION PER JUNCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
MAXIMUM VALUE
t
rr
AT T
AT 25 % I
J
( s)
1.0
2.0
3.0
= 25 °C
[e-mail], [e-mail],
MAP to heatsink
SINUSOIDAL CONDUCTION
RRM
VSKDL240, VSKCL240, VSKJL240, VSKEL240 Series
busbar to MAP
For technical questions within your region, please contact one of the following:
SQUARE PULSE
0.008
0.010
0.013
0.019
0.032
500
I
(A)
pk
TEST CONDITIONS
SYMBOL
(MAGN-A-PAK Power Modules)
SYMBOL
T
Fast Recovery Diodes, 250 A
I
V
R
R
J
RRM
, T
INS
thJC
thCS
Stg
(A/ s)
dI/dt
T
50 Hz, circuit to base, all terminals shorted,
25 °C, t = 1 s
100
J
DC operation
Mounting surface flat, smooth and greased
A mounting compound is recommended
and the torque should be rechecked after a
period of about 3 hours to allow for the
spread of the compound.
RECTANGULAR CONDUCTION
= 150 °C, leakage current
thJC
when devices operate at different conduction angles than DC
- 50
(V)
V
r
TEST CONDITIONS
TEST CONDITIONS
0.007
0.011
0.015
0.020
0.033
AT 25 % I
( s)
2.7
3.5
3.6
TYPICAL VALUES
t
[e-mail]
rr
AT T
RRM
J
= 150 °C
( C)
135
250
360
Q
rr
Vishay Semiconductors
TEST CONDITIONS
T
J
= T
100
145
200
(A)
I
r
J
- 40 to 150
maximum
VALUES
8 to 10
4 to 6
0.125
0.02
850
30
VALUES
3000
MAGN-A-PAK
50
I
FM
di
dt
www.vishay.com
t
rr
UNITS
K/W
UNITS
UNITS
Nm
I
oz.
°C
RM(REC)
K/W
g
mA
V
Q
rr
t
3