4N27 Vishay, 4N27 Datasheet - Page 2

• Manufacturer Part Number: 4N27
• Description: OPTOCOUPLER, TRANSISTOR, 5300VRMS
• Manufacturer: Vishay

Specifications of 4N27

• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 50mA
• Output Voltage: 30V
• Opto Case Style: DIP
• No. Of Pins: 6
• Mounting Type: Through Hole
• Isolation Voltage: 5kV
• Number Of Channels: 1
• Input Type: DC
• Voltage - Isolation: 5000Vrms
• Current Transfer Ratio (min): 10% @ 10mA
• Voltage - Output: 70V
• Current - Output / Channel: 50mA
• Current - Dc Forward (if): 60mA
• Vce Saturation (max): 500mV
• Output Type: Transistor with Base
• Package / Case: 6-DIP (0.300", 7.62mm)
• Forward Current: 60 mA
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 5 V
• Output Device: Transistor With Base
• Configuration: 1
• Maximum Collector Emitter Voltage: 30 V
• Maximum Collector Emitter Saturation Voltage: 500 mV
• Current Transfer Ratio: 30 % (Typ)
• Maximum Forward Diode Voltage: 1.5 V
• Maximum Collector Current: 100 mA
• Maximum Power Dissipation: 150 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Transfer Ratio (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 4N27GI; 4N27GI; 4N27VS

Notes
(1)
(2)
Notes
(1)
(2)
Document Number: 83725
Rev. 1.8, 07-Jan-10
ABSOLUTE MAXIMUM RATINGS
PARAMETER
COUPLER
Isolation test voltage
Creepage distance
Clearance distance
Isolation thickness between emitter and
detector
Comparative tracking index
Isolation resistance
Storage temperature
Operating temperature
Junction temperature
Soldering temperature
ELECTRICAL CHARACTERISTICS
PARAMETER
INPUT
Forward voltage
Reverse current
Capacitance
OUTPUT
Collector base breakdown voltage
Collector emitter breakdown voltage
Emitter collector breakdown voltage
I
I
Collector emitter capacitance
COUPLER
Isolation test voltage
Saturation voltage, collector emitter
Resistance, input output
Capacitance, input output
CEO
CBO
T
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering condditions for through
hole devices (DIP).
T
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
JEDEC registered values are 2500 V, 1500 V, 1500 V, and 500 V for the 4N25, 4N26, 4N27, and 4N28 respectively.
amb
amb
(dark)
(dark)
= 25 °C, unless otherwise specified.
= 25 °C, unless otherwise specified.
(2)
(2)
(2)
(2)
(2)
(2)
(2)
(2)
For technical questions, contact:
(2)
(2)
Optocoupler, Phototransistor Output,
V
I
DIN IEC 112/VDE 0303, part 1
CE
CE
TEST CONDITION
V
V
(1)
distance to seating plane
IO
max.10 s dip soldering:
= 2 mA, I
IO
= 10 V, (base open)
(1)
(emitter open)
Peak, 60 Hz
= 500 V, T
I
V
TEST CONDITION
I
V
I
= 500 V, T
C
E
f = 1 MHz
F
I
C
CB
IO
V
V
V
= 100 μA
with Base Connection
= 100 μA
= 50 mA
R
R
= 1 mA
CE
= 500 V
= 10 V,
= 3 V
= 0 V
≥ 1.5 mm
= 0
F
= 50 mA
amb
amb
= 100 °C
= 25 °C
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PART
4N25
4N26
4N27
4N28
SYMBOL
SYMBOL
BV
V
T
BV
BV
V
T
T
R
R
C
CE(sat)
amb
T
R
C
ISO
C
V
stg
sld
V
IO
IO
I
j
R
CBO
CEO
ECO
CE
IO
IO
IO
F
O
4N25, 4N26, 4N27, 4N28
MIN.
5000
100
Vishay Semiconductors
70
30
7
- 55 to + 125
- 55 to + 100
VALUE
5000
≥ 0.4
10
10
175
125
260
≥ 7
≥ 7
12
11
TYP.
1.3
0.1
0.6
25
10
5
5
5
2
6
MAX.
100
100
1.5
0.5
50
50
50
20
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UNIT
V
mm
mm
mm
RMS
°C
°C
°C
°C
Ω
Ω
UNIT
GΩ
μA
pF
nA
nA
nA
nA
nA
pF
pF
V
V
V
V
V
V
133