4N32 Vishay, 4N32 Datasheet - Page 2

• Manufacturer Part Number: 4N32
• Description: OPTOCOUPLER, TRANSISTOR, 3750VRMS
• Manufacturer: Vishay

Specifications of 4N32

• No. Of Channels: 1
• Optocoupler Output Type: Photodarlington
• Input Current: 50mA
• Output Voltage: 30V
• Opto Case Style: DIP
• No. Of Pins: 6
• Ctr Min: 500%
• Turn Off Time: 100µs
• Isolation Voltage: 5.3kV
• Number Of Channels: 1
• Input Type: DC
• Voltage - Isolation: 5300Vrms
• Current Transfer Ratio (min): 500% @ 10mA
• Voltage - Output: 30V
• Current - Output / Channel: 100mA
• Current - Dc Forward (if): 60mA
• Vce Saturation (max): 1V
• Output Type: Darlington with Base
• Mounting Type: Through Hole
• Package / Case: 6-DIP (0.300", 7.62mm)
• Forward Current: 60 mA
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 3 V
• Output Device: Darlington With Base
• Configuration: 1
• Maximum Collector Emitter Voltage: 30 V
• Maximum Collector Emitter Saturation Voltage: 1000 mV (Typ)
• Maximum Forward Diode Voltage: 1.5 V
• Maximum Collector Current: 125 mA
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Transfer Ratio (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 4N32GI; 4N32GI; 4N32VS

4N32, 4N33
Vishay Semiconductors
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
(1)
Notes
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
(1)
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2
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
INPUT
Reverse voltage
Forward current
Power dissipation
Derate linearly
OUTPUT
Collector emitter breakdown voltage
Emitter base breakdown voltage
Collector base breakdown voltage
Emitter collector breakdown voltage
Collector (load) current
Power dissipation
Derate linearly
COUPLER
Total dissipation
Derate linearly
Isolation test voltage (between emitter
Leakage path
Air path
Isolation resistance
Storage temperature
Operating temperature
Lead soldering time
ELECTRICAL CHARACTERISTICS (T
PARAMETER
INPUT
Forward voltage
Reverse current
Capacitance
OUTPUT
Collector emitter breakdown voltage
Collector base breakdown voltage
Emitter base breakdown voltage
Emitter collector breakdown voltage
Collector emitter leakage current
COUPLER
Collector emitter saturation voltage
Coupling capacitance
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
evaluation. Typical values are for information only and are not part of the testing requirements.
Indicates JEDEC registered values.
(1)
(1)
(1)
For technical questions, contact:
(1)
(1)
I
C
V
TEST CONDITION
V
I
I
I
I
IO
V
= 0.5 mA, V
C
C
C
C
Optocoupler, Photodarlington
IO
Output, High Gain, with Base
CE
= 100 μA, I
= 100 μA, I
= 100 μA, I
= 100 μA, I
TEST CONDITION
= 500 V, T
= 500 V, T
amb
I
F
= 10 V, I
V
V
amb
= 50 mA
R
R
from 55 °C
at 260 °C
= 3 V
= 0 V
= 25 °C, unless otherwise specified)
= 25 °C, unless otherwise specified)
1 s
CE
amb
F
F
F
F
F
amb
Connection
= 0
= 0
= 0
= 0
= 0
= 5 V
= 100 °C
= 25 °C
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SYMBOL
BV
BV
BV
BV
V
I
h
CEsat
C
CEO
V
I
R
CEO
CBO
EBO
ECO
FE
F
O
SYMBOL
BV
BV
BV
BV
P
P
T
V
T
P
R
R
V
amb
I
diss
I
diss
ISO
stg
CEO
EBO
CBO
ECO
C
tot
F
IO
IO
R
MIN.
30
50
13
8
5
- 55 to + 150
- 55 to + 100
TYP.
1.25
0.1
1.5
25
10
1
1
VALUE
10
 10
5300
1.33
100
100
150
250
3.3
60
30
50
10
3
8
5
2
7
7
12
11
Document Number: 81865
MAX.
100
100
1.5
Rev. 1.2, 15-Feb-11
mm min.
mm min.
mW/°C
mW/°C
mW/°C
UNIT
V
mW
mW
mW
mA
mA
°C
°C
RMS


V
V
V
V
V
s
UNIT
μA
pF
nA
pF
V
V
V
V
V
V