CNY65B Vishay, CNY65B Datasheet - Page 3

• Manufacturer Part Number: CNY65B
• Description: OPTOCOUPLER, TRANSISTOR, 1000VRMS
• Manufacturer: Vishay

Specifications of CNY65B

• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 50mA
• Output Voltage: 32V
• Opto Case Style: Through Hole
• No. Of Pins: 4
• Propagation Delay: 2.6µs
• Isolation Voltage: 1kV
• Number Of Channels: 1
• Input Type: DC
• Voltage - Isolation: 1000Vrms
• Current Transfer Ratio (min): 100% @ 5mA
• Current Transfer Ratio (max): 200% @ 5mA
• Voltage - Output: 32V
• Current - Output / Channel: 50mA
• Current - Dc Forward (if): 75mA
• Vce Saturation (max): 300mV
• Output Type: Transistor
• Mounting Type: Through Hole
• Package / Case: 4-DIP Module
• Forward Current: 75 mA
• Maximum Input Diode Current: 75 mA
• Maximum Reverse Diode Voltage: 5 V
• Output Device: Transistor
• Configuration: 1
• Maximum Collector Emitter Voltage: 32 V
• Maximum Collector Emitter Saturation Voltage: 300 mV
• Current Transfer Ratio: 200 %
• Maximum Forward Diode Voltage: 1.6 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Note
• According to DIN EN 60747-5-2 (see fig. 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance
Document Number: 83540
Rev. 2.1, 24-Feb-11
CURRENT TRANSFER RATIO (T
PARAMETER
I
SAFETY AND INSULATION RATED PARAMETERS
PARAMETER
Partial discharge test voltage -
routine test
Partial discharge test voltage -
lot test (sample test)
Insulation resistance
Forward current
Power dissipation
Rated impulse voltage
Safety temperature
C
with the safety ratings shall be ensured by means of suitable protective circuits.
/I
F
250
225
200
175
150
125
100
75
50
25
0
0
Fig. 1 - Safety Derating Diagram
25
I
T
SI
SI
(mA)
- Safety Temperature(°C)
50
P
SO
75 100 125 150 175 200
(mW)
For technical questions, contact:
V
V
V
IO
IO
IO
(construction test only)
t
Optocoupler, Phototransistor Output,
V
Tr
= 500 V, T
= 500 V, T
TEST CONDITION
= 500 V, T
TEST CONDITION
CE
100 %, t
= 60 s, t
amb
= 5 V, I
(see fig. 2)
Very High Isolation Voltage
= 25 °C, unless otherwise specified)
test
test
amb
amb
amb
F
= 10 mA
= 1 s
= 10 s,
= 100 °C
= 150 °C
= 25 °C
SYMBOL
[e-mail]
CNY64A
CNY65A
CNY64B
CNY65B
CNY66B
CNY64,
CNY65,
V
CNY66
PART
P
V
V
R
R
R
IOTM
T
I
pd
pd
SI
SO
IO
IO
IO
SI
Fig. 2 - Test Pulse Diagram for Sample Test According to
13930
V
V
V
IOWM
IOTM
IORM
SYMBOL
V
DIN EN 60747-5-2 (VDE 0884); IEC60747-5-5
Pd
CTR
CTR
CTR
CTR
CTR
CTR
0
MIN.
10
10
10
2.8
2.2
12
11
9
t
1
CNY64, CNY65, CNY66
MIN.
100
100
100
50
63
63
Vishay Semiconductors
t
t
t
1
3
stres
t
, t
test
, t
TYP.
2
4
t
Tr
= 1 to 10 s
= 1 s
= 10 s
= 12 s
= 60 s
TYP.
MAX.
120
250
150
12
MAX.
300
125
125
200
200
200
t
2
t
www.vishay.com
3
t
t
stres
test
t
t
4
UNIT
mW
mA
kV
kV
kV
°C
UNIT



%
%
%
%
%
%
3