H11AA1 Vishay, H11AA1 Datasheet - Page 2

• Manufacturer Part Number: H11AA1
• Description: OPTOCOUPLER, TRANSISTOR, 5300VRMS
• Manufacturer: Vishay

Specifications of H11AA1

• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 10mA
• Output Voltage: 30V
• Opto Case Style: DIP
• No. Of Pins: 6
• Mounting Type: Through Hole
• Isolation Voltage: 5.3kV
• Number Of Channels: 1
• Input Type: AC, DC
• Voltage - Isolation: 5300Vrms
• Current Transfer Ratio (min): 20% @ 10mA
• Voltage - Output: 30V
• Current - Dc Forward (if): 60mA
• Vce Saturation (max): 400mV
• Output Type: Transistor with Base
• Package / Case: 6-DIP (0.300", 7.62mm)
• Forward Current: 60 mA
• Maximum Input Diode Current: 60 mA
• Output Device: Transistor With Base
• Configuration: 1
• Maximum Collector Emitter Voltage: 30 V
• Maximum Collector Emitter Saturation Voltage: 400 mV
• Maximum Forward Diode Voltage: 1.5 V
• Maximum Power Dissipation: 200 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output / Channel: -
• Current Transfer Ratio (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 751-1276-5; H11AA1GI; H11AA1GI

H11AA1
Vishay Semiconductors
Note
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
Note
• Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
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2
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
INPUT
Forward continuous current
Power dissipation
Derate linearly from 25 °C
OUTPUT
Power dissipation
Derate linearly from 25 °C
Collector emitter breakdown voltage
Emitter base breakdown voltage
Collector base breakdown voltage
COUPLER
Isolation test voltage (RMS)
Creepage distance
Clearance distance
Comparative tracking index
Isolation resistance
Storage temperature range
Operating temperature range
Lead soldering time at 260 °C
ELECTRICAL CHARACTERISTCS (T
PARAMETER
INPUT
Forward voltage
OUTPUT
Collector emitter breakdown voltage
Emitter base breakdown voltage
Collector base breakdown voltage
Collector emitter leakage current
COUPLER
Collector emitter saturation voltage
CURRENT TRANSFER RATIO (T
PARAMETER
DC current transfer ratio
Symmetry
(CTR at + 10 mA)/(CTR at - 10 mA)
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
evaluations. Typical values are for information only and are not part of the testing requirements.
For technical questions, contact:
per DIN IEC 112/VDE 0303, part 1
Between emitter and detector,
Optocoupler, Phototransistor Output,
I
I
F
F
referred to standard climate
23 °C/50% RH, DIN 50014
V
V
= ± 10 mA, I
= ± 10 mA, V
IO
TEST CONDITION
TEST CONDITION
IO
amb
AC Input, with Base Connection
= 500 V, T
TEST CONDITION
= 500 V, T
I
F
I
I
V
C
E
I
C
amb
= ± 10 mA
= 25 °C, unless otherwise specified)
CE
amb
= 100 μA
= 100 μA
= 1 mA
= 10 V
= 25 °C, unless otherwise specified)
= 25 °C, unless otherwise specified)
C
amb
CE
amb
= 0.5 mA
= 10 V
= 100 °C
= 25 °C
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SYMBOL
SYMBOL
BV
CTR
BV
BV
V
I
CEsat
CEO
V
CEO
EBO
CBO
F
DC
SYMBOL
BV
BV
BV
T
P
P
V
T
CTI
T
R
R
amb
I
diss
diss
ISO
stg
CEO
CBO
sld
F
EBO
IO
IO
MIN.
MIN.
0.33
30
70
20
5
- 55 to + 150
- 55 to + 100
TYP.
TYP.
VALUE
1.2
 10
 10
5
1
5300
± 60
100
200
175
1.3
2.6
 7
 7
30
70
10
5
12
11
Document Number: 83608
MAX.
MAX.
100
1.5
0.4
3
Rev. 1.7, 23-Feb-11
mW/°C
mW/°C
UNIT
V
mW
mW
mm
mm
mA
RMS
°C
°C


V
V
V
s
UNIT
UNIT
nA
%
V
V
V
V
V