BPW83 Vishay, BPW83 Datasheet - Page 2
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BPW83
Manufacturer Part Number
BPW83
Description
DIODE, PHOTO, 950NM, 65°, SIDE LOOKING
Manufacturer
Vishay
Type
Silicon PIN Photodioder
Specifications of BPW83
Wavelength Typ
950nm
Half Angle
65°
Dark Current
2nA
Diode Case Style
Side Looking
No. Of Pins
2
Operating Temperature Range
-40°C To +100°C
Power Dissipation Pd
0.215W
Lens Type
Epoxy
Photodiode Material
Silicon
Peak Wavelength
950 nm
Maximum Reverse Voltage
60 V
Maximum Power Dissipation
215 mW
Maximum Light Current
45 uA
Maximum Dark Current
30 nA
Maximum Rise Time
100 ns
Maximum Fall Time
100 ns
Package / Case
Side Looker
Maximum Operating Temperature
+ 100 C
Photodiode Type
PIN
Polarity
Forward
Reverse Breakdown Voltage
60V
Dark Current (max)
30nA
Power Dissipation
215mW
Light Current
45uA
Rise Time
100ns
Fall Time
100ns
Mounting
Through Hole
Pin Count
2
Package Type
Side View
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BPW83L
Manufacturer:
TEMIC
Quantity:
1 000
Note
T
BASIC CHARACTERISTICS
T
Document Number: 81530
Rev. 1.4, 08-Sep-08
amb
amb
BASIC CHARACTERISTICS
PARAMETER
Breakdown voltage
Reverse dark current
Diode capacitance
Open circuit voltage
Short circuit current
Reverse light current
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Noise equivalent power
Rise time
Fall time
= 25 °C, unless otherwise specified
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
= 25 °C, unless otherwise specified
94 8403
1000
100
10
1
20
T
amb
40
- Ambient Temperature (°C)
60
Silicon PIN Photodiode, RoHS Compliant
For technical questions, contact: detectortechsupport@vishay.com
V
R
V
V
= 10 V
R
R
E
E
E
80
= 10 V, R
= 10 V, R
V
V
e
e
e
R
R
= 1 mW/cm
V
= 1 mW/cm
= 1 mW/cm
= 0 V, f = 1 MHz, E = 0
= 3 V, f = 1 MHz, E = 0
R
TEST CONDITION
I
R
V
= 10 V, λ = 870 nm
R
= 100 µA, E = 0
= 10 V, E = 0
100
V
L
L
R
= 1 kΩ, λ = 820 nm
= 1 kΩ, λ = 820 nm
= 5 V
2
2
2
, λ = 870 nm,
, λ = 870 nm
, λ = 870 nm
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
SYMBOL
V
NEP
λ
C
C
V
I
I
λ
(BR)
I
ϕ
t
ro
ra
0.5
t
k
r
f
D
D
o
p
94 8409
1.4
1.2
1.0
0.8
0.6
0
MIN.
60
43
T
20
amb
Vishay Semiconductors
- Ambient Temperature (°C)
790 to 1050
4 x 10
λ = 950 nm
V
40
TYP.
± 65
350
950
100
100
R
70
25
38
45
2
= 5 V
-14
60
MAX.
30
40
80
www.vishay.com
BPW83
100
W/√ Hz
UNIT
deg
mV
nm
nm
nA
pF
pF
µA
µA
ns
ns
V
411