OP520 OPTEK TECHNOLOGY, OP520 Datasheet - Page 2

• Manufacturer Part Number: OP520
• Description: TRANSISTOR, PHOTO, NPN, 935NM, 1206
• Manufacturer: OPTEK TECHNOLOGY

Specifications of OP520

• Transistor Polarity: NPN
• Wavelength Typ: 935nm
• Power Consumption: 75mW
• No. Of Pins: 2
• Power Dissipation Pd: 75mW
• Half Angle: 160°
• Rise Time: 15µs
• Voltage, Vcc: 20V
• Transistor Type: Photo
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SMD Silicon Phototransistor
SMD Silicon Phototransistor
OP520, OP521
OP520, OP521
Issue 1.3
Page 2 of 3
Absolute Maximum Ratings
T
Notes:
1.
2.
Electrical Characteristics
3.
4.
Storage Temperature Range
Operating Temperature Range
Lead Soldering Temperature
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Current
Power Dissipation
A
= 25
Solder time less than 5 seconds at temperature extreme.
De-rate linearly at 2.17 mW/° C above 25° C.
Light source is an unfiltered GaAs LED with a peak emission wavelength of 935nm and a radiometric intensity level which varies less than
10% over the entire lens surface of the phototransistor being tested.
To Calculate typical collector dark current in µA, use the formula I
160%
140%
120%
100%
SYMBOL
80%
60%
40%
20%
V
V
V
o
I
(BR)CEO
(BR)ECO
CE(SAT)
C(ON)
I
t
CEO
05/10
C unless otherwise noted
r
, t
0
Normalized at E
Conditions: V
λ = 935nm, T
f
1.0
Relative On-State Collector
Ee—Irradiance (mW/cm
2.0
Current vs. Irradiance
A
CE
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
= 25 °C
e
= 5V,
On-State Collector Current
Collector-Emitter Saturation Voltage
Collector-Emitter Dark Current
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Rise and Fall Times
= 5mW/cm
3.0
2
4.0
PARAMETER
5.0
(T
6.0
A
= 25°C unless otherwise noted)
2
)
7.0
8.0
Phone: [phone] FAX: [phone] [e-mail] www.optekinc.com
MIN
0.25
30
5
CEO
= 10
TYP
(0.04Ta-3.4)
OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006
15
140%
110%
100%
130%
120%
90%
80%
70%
-25
MAX
Relative On-State Collector Current
100
Normalized at T
Conditions: V
λ = 935nm, T
0.4
where Ta is the ambient temperature in ° C.
0
UNITS
A
CE
mA
nA
= 25 °C
Temperature—(°C)
µs
V
V
V
vs. Temperature
A
= 5V,
= 25°C .
25
V
I
V
I
I
I
C
C
E
C
CE
CE
= 1mA, R
= 100µA, E
= 100µA, E
= 100µA, E
= 5.0V, E
= 5.0V, E
50
CONDITIONS
L
= 1KΩ
e
e
e
e
e
= 5.0mW/cm
= 5.0mW/cm
= 0
= 0
= 0
75
80°C
-40° C to +85° C
-25° C to +85° C
(4)
-40°C
100
75 mW
260° C
2 (3)
2 (3)
20 mA
30 V
5 V
(1)
(2)