OP570 OPTEK TECHNOLOGY, OP570 Datasheet - Page 3

• Manufacturer Part Number: OP570
• Description: TRANSISTOR, PHOTO, NPN, 935NM, SMD
• Manufacturer: OPTEK TECHNOLOGY

Specifications of OP570

• Transistor Polarity: NPN
• Wavelength Typ: 935nm
• Power Consumption: 130mW
• Viewing Angle: 25°
• No. Of Pins: 2
• Power Dissipation Pd: 130mW
• Half Angle: 25°
• Transistor Type: Photo
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Silicon Phototransistor
OP570 Series
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: [phone] or [phone]
Absolute Maximum Ratings
Electrical Characteristics
Input Diode
SYMBOL
V
V
V
I
Notes:
1. Light source is an unfiltered GaAl LED with a peak emission wavelength of 935nm and a radiometric intensity level which varies less
2. To calculate typical collector dark current in µA, use the formula I
Notes:
1. Solder time less than 5 seconds at temperature extreme.
2. Derate linearly at 2.17 mW/° C above 25° C.
BR(CEO)
(BR)ECO
160%
140%
120%
100%
CE(SAT)
C (ON)
I
CEO
80%
60%
40%
20%
Storage Temperature Range
Operating Temperature Range
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Current
Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron]
Power Dissipation
than 10% over the entire lens surface of the phototransistor being tested.
0
Normalized at E
Conditions: V
λ = 935nm, T
On-State Collector Current
Forward Voltage
Reverse Current
Wavelength at Peak Emission
Emission Angle at Half Power Points
1.0
Relative On-State Collector
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Ee—Irradiance (mW/cm
2.0
Current vs. Irradiance
A
CE
= 25 °C
e
= 5V,
= 5mW/cm
3.0
PARAMETER
4.0
2
5.0
(T
A
(T
FAX: [phone] [e-mail] www.optekinc.com
= 25°C unless otherwise noted)
6.0
A
=25°C unless otherwise noted)
2
)
7.0
8.0
MIN
2.5
30
5
-
-
CEO
TYP
-
-
-
-
-
= 10
(0.04 Ta-3.4)
140%
130%
120%
110%
100%
MAX
90%
80%
70%
100
0.4
-
-
-
-25
Relative On-State Collector Current
Normalized at T
Conditions: V
λ = 935nm, T
UNITS
where Ta is the ambient temperature in ° C.
mA
nA
V
V
V
0
A
CE
= 25 °C
Temperature—(°C)
vs. Temperature
V
I
V
I
I
A
= 5V,
C
C
E
= 25°C .
CE
CE
= 100 µA
= 100 µA, E
= 100 µA
25
= 5.0 V, E
= 5.0 V, E
TEST CONDITIONS
50
E
E
E
= 5.0 mW/cm
= 0
= 2.0 mW/cm
(2)
75
-40
-25
Issue 1.2
o
o
C to +85
C to +85
130 mW
100
260° C
Page 3 of 4
2 (1)
2 (1)
20 mA
30 V
02/07
5 V
o
o
(1)
(2)
C
C