CNY17F-3X006 Vishay, CNY17F-3X006 Datasheet - Page 6

• Manufacturer Part Number: CNY17F-3X006
• Description: Optocoupler
• Manufacturer: Vishay

Specifications of CNY17F-3X006

• Leaded Process Compatible: Yes
• Forward Current: 60 mA
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Transistor
• Output Type: DC
• Configuration: 1
• Input Type: DC
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 400 mV
• Isolation Voltage: 5300 Vrms
• Current Transfer Ratio: 200 %
• Maximum Forward Diode Voltage: 1.65 V
• Maximum Collector Current: 100 mA
• Maximum Power Dissipation: 150 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Package / Case: PDIP-6
• Number Of Elements: 1
• Reverse Breakdown Voltage: 6V
• Forward Voltage: 1.65V
• Collector-emitter Voltage: 70V
• Package Type: PDIP
• Collector Current (dc) (max): 100mA
• Power Dissipation: 150mW
• Collector-emitter Saturation Voltage: 0.4V
• Pin Count: 6
• Mounting: Through Hole
• Operating Temp Range: -55C to 100C
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

CNY17F
Vishay Semiconductors
www.vishay.com
6
Collector Current and Modulation Depth CNY17F-2
Collector Current and Modulation Depth CNY17F-3
Collector Current and Modulation Depth CNY17F-4
icny17f_13
icny17f_14
icny17f_15
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0
Fig. 13 - Saturation Voltage vs.
1
Fig. 14 - Saturation Voltage vs.
Fig. 15 - Saturation Voltage vs.
1
1
V
V
CEsat
CEsat
I
I
F
F
= 3 x I
= 2 x I
= f (I
= f (I
V
CEsat
I
C
C
F
) (T
C
) (T
C
= 2 x I
= f (I
A
A
I
I
F
C
= 25 °C)
I
= 25 °C)
I
C
= I
C
C
(mA)
) (T
C
10
10
10
(mA)
(mA)
C
For technical questions, contact:
I
I
F
F
A
= 3 x I
= 2 x I
= 25 °C)
Optocoupler, Phototransistor Output,
I
F
I
= 3 x I
C
C
F
= I
C
C
100
100
100
no Base Connection
[e-mail]
Fig. 17 - Permissible Power Dissipation for Transistor and Diode
icny17f_16
icny17f_17
icny17f_18
Fig. 18 - Permissible Forward Current Diode
200
150
100
120
10
10
10
10
50
90
60
30
0
0
4
3
2
1
Fig. 16 - Permissible Pulse Load
0
10
0
0.05
0.1
0.2
0.5
DC
-5
D = 0
10
0.005
0.01
0.02
-4
25
25
P
Diode
D =
10
tot
I
Transistor
F
-3
= f (T
= f (T
T
T
T
t
T
p
A
t
A
p
50
A
50
10
D = parameter,
(°C)
(°C)
= 25 °C, I
(s)
A
A
)
)
-2
t
Document Number: 83607
p
10
T
-1
75
F
75
Rev. 1.7, 04-Nov-10
= f(t
10
p
)
0
I
F
10
100
100
1