H11AA1TVM Fairchild Semiconductor, H11AA1TVM Datasheet - Page 3

NPN-Output Ac-Input Optocoupler,1-CHANNEL,7.5kV ISOLATION,DIP

H11AA1TVM

Manufacturer Part Number
H11AA1TVM
Description
NPN-Output Ac-Input Optocoupler,1-CHANNEL,7.5kV ISOLATION,DIP
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of H11AA1TVM

Input Type
AC
Output Type
DC
Output Device
Transistor With Base
Number Of Elements
1
Forward Voltage
1.5V
Forward Current
60mA
Collector-emitter Voltage
30V
Package Type
PDIP W
Collector Current (dc) (max)
50mA
Isolation Voltage
5250Vrms
Power Dissipation
250mW
Collector-emitter Saturation Voltage
0.4V
Pin Count
6
Mounting
Through Hole
Operating Temp Range
-40C to 100C
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
H11AA1TVM
Manufacturer:
MOTOROLA/摩托罗拉
Quantity:
20 000
©2006 Fairchild Semiconductor Corporation
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3
Electrical Characteristics
Individual Component Characteristics
*Typical values at T
Transfer Characteristics
Isolation Characteristics
*Typical values at T
EMITTER
DETECTOR
Symbol
Symbol
Symbol
BV
BV
BV
BV
V
CTR
I
C
C
C
CE(SAT)
CEO
V
V
R
C
C
CEO
CBO
ECO
CE
CB
EBO
EB
ISO
F
ISO
J
I-O
CE
Input Forward Voltage
Capacitance
Breakdown Voltage
Collector to Emitter
Collector to Base
Emitter to Base
Emitter to Collector
Leakage Current
Collector to Emitter
Capacitance Collector
to Emitter
Collector to Base
Emitter to Base
Characteristics
Current Transfer Ratio,
Collector to Emitter
Current Transfer Ratio,
Symmetry
Saturation Voltage,
Collector to Emitter
Package Capacitance
Input/Output
Isolation Voltage
Isolation Resistance
Characteristic
Parameter
A
A
= 25°C
= 25°C
(T
I
V
I
I
I
I
V
V
V
V
F
C
C
E
E
A
F
CE
CE
CB
EB
Test Conditions
V
f = 60Hz, t = 1 sec.
V
= ±10mA
= 100µA, I
= 100µA, I
= 1.0mA, I
= 100µA, I
(Figure 11)
I
= 25°C Unless otherwise specified.)
= 0 V, f = 1.0MHz
I
F
I
F
I-O
I-O
F
= 10 V, I
= 0, f = 1MHz
= 0, f = 1MHz
= 0, f = 1MHz
= ±10mA, I
Test Conditions
= ±10mA, V
= ±10mA, V
Test Conditions
= 0, f = 1MHz
= 500 VDC
F
F
F
F
F
= 0
= 0
= 0
= 0
= 0
CE
CE
CE
= 0.5mA
3
= 10V
= 10V
H11AA1M
H11AA3M
H11AA4M
H11AA2M
Device
H11AA4M
H11AA3M
H11AA1M
H11AA2M
Min.
7500
All
All
All
All
All
All
All
All
All
Device
10
11
All
All
Typ.*
Min.
Min.
100
0.7
.33
50
20
10
30
70
5
7
Typ.*
Typ.*
1.17
100
120
80
10
10
10
80
15
1
1
Max.
Max.
Max.
3.0
.40
200
1.5
50
www.fairchildsemi.com
Vac(pk)
Units
pF
Units
Unit
%
V
pF
nA
pF
pF
pF
V
V
V
V
V

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