TCDT1101G Vishay, TCDT1101G Datasheet - Page 3

• Manufacturer Part Number: TCDT1101G
• Description: Optocoupler
• Manufacturer: Vishay

Specifications of TCDT1101G

• Leaded Process Compatible: Yes
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 5 V
• Output Device: Transistor
• Output Type: DC
• Configuration: 1
• Input Type: DC
• Maximum Collector Emitter Voltage: 32 V
• Maximum Collector Emitter Saturation Voltage: 300 mV
• Isolation Voltage: 3750 Vrms
• Current Transfer Ratio: 80 %
• Maximum Forward Diode Voltage: 1.6 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Package / Case: PDIP-6
• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 50mA
• Output Voltage: 32V
• Opto Case Style: DIP
• No. Of Pins: 6
• Approval Bodies: UL
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TCDT1100/TCDT1100G
Vishay Semiconductors
Note
According to DIN EN 60747-5-5 (see figure 1). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance
with the safety ratings shall be ensured by means of suitable protective circuits.
www.vishay.com
778
CURRENT TRANSFER RATIO
PARAMETER
I
MAXIMUM SAFETY RATINGS
PARAMETER
INPUT
Forward current
OUTPUT
Power dissipation
COUPLER
Rated impulse voltage
Safety temperature
INSULATION RATED PARAMETERS
PARAMETER
Partial discharge test voltage -
routine test
Partial discharge test voltage -
lot test (sample test)
Insulation resistance
C
/I
F
94 9182
300
250
200
150
100
50
0
0
Fig. 1 - Derating Diagram
T
25
si
- Safety Temperature (°C)
IR-diode
I
si
50
(mA)
P
Phototransistor
si
75
For technical questions, contact: [e-mail]
(mW)
V
V
V
TEST CONDITION
IO
IO
CE
(construction test only)
100
TEST CONDITION
t
Tr
= 500 V, T
= 500 V, T
TEST CONDITION
= 5 V, I
100 %, t
= 60 s, t
(see figure 2)
V
Optocoupler, Phototransistor Output
125
IO
F
= 500 V
= 10 mA
test
test
amb
amb
150
= 1 s
= 10 s,
= 100 °C
= 150 °C
SYMBOL
TCDT1100G
TCDT1101G
TCDT1102G
TCDT1103G
TCDT1100
TCDT1101
TCDT1102
TCDT1103
V
P
SYMBOL
IOTM
T
PART
I
diss
F
si
V
V
V
R
R
R
IOTM
pd
pd
IO
IO
IO
Fig. 2 - Test Pulse Diagram for Sample Test According to
13930
V
SYMBOL
V
V
IOWM
IOTM
IORM
V
MIN.
DIN EN 60747-5-5/DIN EN 60747-; IEC60747
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
Pd
0
MIN.
10
10
10
1.6
1.3
6
12
11
9
t
1
MIN.
100
40
40
63
TYP.
t
t
t
1
3
stres
t
, t
test
, t
TYP.
2
4
t
Tr
= 1 to 10 s
= 1 s
= 10 s
= 12 s
= 60 s
TYP.
Document Number: 83535
MAX.
130
265
150
MAX.
6
MAX.
Rev. 1.6, 16-May-08
125
200
80
t
2
t
3
t
t
test
stres
t
t
4
UNIT
UNIT
mW
mA
kV
°C
UNIT
kV
kV
kV
Ω
Ω
Ω
%
%
%
%
%
%
%
%