TCDT1103G Vishay, TCDT1103G Datasheet - Page 4

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TCDT1103G

Manufacturer Part Number
TCDT1103G
Description
Optocoupler
Manufacturer
Vishay
Datasheets

Specifications of TCDT1103G

Leaded Process Compatible
Yes
Maximum Input Diode Current
60 mA
Maximum Reverse Diode Voltage
5 V
Output Device
Phototransistor
Output Type
DC
Configuration
1 Channel
Input Type
DC
Maximum Collector Emitter Voltage
32 V
Maximum Collector Emitter Saturation Voltage
0.3 V
Isolation Voltage
5000 Vrms
Current Transfer Ratio
200 %
Maximum Forward Diode Voltage
1.6 V
Maximum Collector Current
50 mA
Maximum Power Dissipation
250 mW
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 55 C
Package / Case
PDIP-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TCDT1103G
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
TCDT1103G
Quantity:
70 000
Maximum Safety Ratings
This device is used for protective separation against electrical shock only within the maximum safety ratings.
This must be ensured by using protective circuits in the applications.
Input (Emitter)
Output (Detector)
Coupler
Insulation Rated Parameters
Rev. A3, 11–Jan–99
Forward current
Power dissipation
Rated impulse voltage
Safety temperature
Partial discharge test voltage –
Routine test
Partial discharge test voltage – t
Lot test (sample test)
Insulation resistance
94 9182
300
250
200
150
100
50
0
0
Parameter
Parameters
Parameters
Parameters
Figure 1. Derating diagram
g
25
T
si
– Safety Temperature ( C )
IR-Diode
Isi ( mA )
50
75
g
Phototransistor
Psi ( mW )
100
100%, t
(see figure 2)
V
V
T
V
T
(construction test only)
Tr
Tr
amb
amb
IO
IO
IO
T
= 60 s, t
amb
Test Conditions
= 500 V
= 500 V,
= 500 V,
125
(according to VDE 0884) see figure 1
= 100 ° C
= 150 ° C
Test Conditions
Test Conditions
Test Conditions
test
25 ° C
150
(according to VDE 0884)
test
test
= 1 s
= 10 s,
Figure 2. Test pulse diagram for sample test according to
V
13930
V IOWM
V IORM
V IOTM
Symbol
V
V Pd
V
V
R
R
R
IOTM
pd
pd
IO
IO
IO
0
Symbol
Symbol
Symbol
V
t 1
P
IOTM
T
I
TCDT1100(G) Series
si
si
si
10
Min.
10
10
1.6
1.3
6
12
11
9
DIN VDE 0884
t test = 10 s
t stres = 12 s
t 1 , t 2 = 1 to 10 s
t 3 , t 4 = 1 s
Vishay Telefunken
Typ.
t Tr = 60 s
Value
Value
Value
130
265
150
6
Max.
t 2
t 3 t test
Unit
Unit
mW
Unit
t stres
mA
Unit
° C
kV
kV
kV
kV
W
W
W
t
t 4
211

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