TCDT1103G Vishay, TCDT1103G Datasheet - Page 6

• Manufacturer Part Number: TCDT1103G
• Description: Optocoupler
• Manufacturer: Vishay

Specifications of TCDT1103G

• Leaded Process Compatible: Yes
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 5 V
• Output Device: Phototransistor
• Output Type: DC
• Configuration: 1 Channel
• Input Type: DC
• Maximum Collector Emitter Voltage: 32 V
• Maximum Collector Emitter Saturation Voltage: 0.3 V
• Isolation Voltage: 5000 Vrms
• Current Transfer Ratio: 200 %
• Maximum Forward Diode Voltage: 1.6 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Package / Case: PDIP-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TCDT1100/ TCDT1100G
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
www.vishay.com
6
96 1 1700
96 11862
96 11920
Figure 6. Total Power Dissipation vs. Ambient Temperature
1000
Figure 8. Relative Current Transfer Ratio vs. Ambient
300
250
200
150
100
100
0.1
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
50
10
0
1
- 30 -20 -10 0 10 20 30 40 50 60 70 80
Figure 7. Forward Current vs. Forward Voltage
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Phototransistor
IR-diode
Coupled device
T
V
amb
CE
I
T
F
amb
V
=10 mA
= 5 V
- Ambient Temperature ( ° C )
F
– Ambient T emperature( °C )
- Forward Voltage ( V )
40
Temperature
80
120
95 11055
95 11026
95 11054
Figure 11. Collector Emitter Saturation Voltage vs. Collector
Figure 9. Collector Dark Current vs. Ambient Temperature
Figure 10. Collector Current vs. Collector Emitter Voltage
10000
1000
100
100
0.1
1.0
0.8
0.6
0.4
0.2
10
10
1
0
1
0.1
0
1
V
V
T
CE
amb
CE
I
F
I
= 20 V
- Collector Emitter Voltage ( V )
25
= 0
C
- Ambient Temperature ( ° C )
- Collector Current ( mA )
I
F
1
= 50mA
50
10
Current
CTR = 50%
10%
10
20%
75
Document Number 83535
20 mA
10 mA
5 mA
1 mA
2 mA
100
100
100
Rev. 1.6, 26-Oct-04