ZXMC3AMCTA Diodes Zetex, ZXMC3AMCTA Datasheet - Page 2

• Manufacturer Part Number: ZXMC3AMCTA
• Description: MOSFET N+P 30V 2.9A/2.1A DFN
• Manufacturer: Diodes Zetex

Specifications of ZXMC3AMCTA

• Input Capacitance (ciss) @ Vds: 190pF @ 25V
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.9A, 2.1A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 3.9nC @ 10V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMC3AMCTATR

Thermal Characteristics
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Body diode)
Pulse Source Current (Body diode)
Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
Notes:
ZXMC3AMC
Document number: DS35088 Rev. 1 - 2
3. For a device surface mounted on 28mm x 28mm (8cm
4. Same as note (3) except the device is measured at t < 5 sec.
5. Same as note (3), except the device is surface mounted on 31mm x 31mm (10cm
6. Same as note (3), except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.
7. For a dual device with one active die.
8. For dual device with 2 active die running at equal power.
9. Thermal resistance from junction to solder-point (at the end of the drain lead).
measured when operating in a steady-state condition. The heatsink is split in half with the exposed drain pads connected to each half.
Characteristic
Characteristic
@T
V
V
A
GS
GS
= 25°C unless otherwise specified
= 10V
= 10V
@T
A
= 25°C unless otherwise specified
(Notes 4 & 7)
T
(Notes 3 & 7)
(Notes 6 & 7)
(Notes 4 & 7)
(Notes 6 & 7)
A
= 70°C (Notes 4 & 7)
(Notes 3 & 7)
(Notes 4 & 7)
(Notes 5 & 7)
(Notes 5 & 8)
(Notes 3 & 7)
(Notes 4 & 7)
(Notes 5 & 7)
(Notes 5 & 8)
(Notes 7 & 9)
2
) FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
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2 of 11
Symbol
T
Symbol
J
V
V
R
R
,
I
I
P
DSS
GSS
DM
I
I
SM
T
θJA
θJL
D
S
D
STG
2
) FR4 PCB with high coverage of single sided 1oz copper.
N-channel – Q1 P-channel – Q2
N-channel – Q1 P-channel – Q2
Diodes Incorporated
±20
3.7
3.0
2.9
3.2
30
13
13
A Product Line of
-55 to +150
1.50
2.45
19.6
1.13
1.70
13.6
83.3
51.0
73.5
17.1
111
12
9
±20
-2.7
-2.2
-2.1
-9.2
-2.8
-9.2
-30
ZXMC3AMC
© Diodes Incorporated
December 2010
mW/°C
°C/W
Unit
Unit
°C
W
V
A