SI4276DY-T1-E3 Vishay, SI4276DY-T1-E3 Datasheet - Page 7

• Manufacturer Part Number: SI4276DY-T1-E3
• Description: MOSFET 2N-CH 30V 8A SO8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4276DY-T1-E3

• Input Capacitance (ciss) @ Vds: 1000pF @ 15V
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15.3 mOhm @ 9.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Power - Max: 3.6W, 2.8W
• Mounting Type: *
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 66599
S10-1289-Rev. A, 31-May-10
0.01
0.01
0.1
0.1
2
1
2
1
10
10
-4
-4
Single Pulse
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
10
-3
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
Square Wave Pulse Duration (s)
10
Square Wave Pulse Duration (s)
-2
10
-1
10
1
-1
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
Notes:
P
DM
JM
-
T
A
t
1
1
= P
t
2
Vishay Siliconix
DM
Z
thJA
thJA
100
t
t
(t)
Si4276DY
1
2
= 85 °C/W
www.vishay.com
600
10
7