SI5975DC-T1-E3 Vishay, SI5975DC-T1-E3 Datasheet - Page 2
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SI5975DC-T1-E3
Manufacturer Part Number
SI5975DC-T1-E3
Description
MOSFET DUAL P-CH 12V 3.1 CHIPFET
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SI5975DC-T1-E3.pdf
(5 pages)
Specifications of SI5975DC-T1-E3
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
86 mOhm @ 3.1A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
3.1A
Vgs(th) (max) @ Id
450mV @ 1mA
Gate Charge (qg) @ Vgs
9nC @ 4.5V
Power - Max
1.1W
Mounting Type
*
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Si5975DC
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
b
10
8
6
4
2
0
0.0
0.5
a
a
V
DS
Output Characteristics
a
- Drain-to-Source Voltage (V)
1.0
J
= 25 °C, unless otherwise noted
a
V
1.5
GS
= 5 V thru 2.5 V
Symbol
R
V
I
t
t
I
I
D(on)
DS(on)
V
GS(th)
Q
Q
d(on)
d(off)
GSS
DSS
g
Q
t
t
SD
t
2.0
rr
fs
gs
gd
r
f
g
1.5 V
2 V
1 V
2.5
V
V
I
DS
D
DS
≅ - 1 A, V
= - 6 V, V
I
F
= - 9.6 V, V
V
V
V
V
3.0
V
V
= - 0.9 A, dI/dt = 100 A/µs
V
V
DS
GS
GS
GS
I
DS
V
S
DS
DS
DS
DD
= - 0.9 A, V
Test Conditions
≤ - 5 V, V
= - 4.5 V, I
= - 2.5 V, I
= - 1.8 V, I
= - 9.6 V, V
= - 5 V, I
= V
= 0 V, V
= - 6 V, R
GEN
GS
GS
GS
= - 4.5 V, I
= - 4.5 V, R
, I
D
GS
= 0 V, T
GS
D
D
D
D
GS
= - 1 mA
= - 3.1 A
L
GS
= - 3.1 A
= - 2.5 A
= - 1.0 A
= ± 8 V
= - 4.5 V
= 6 Ω
= 0 V
= 0 V
D
J
= 85 °C
= - 3.1 A
g
10
= 6 Ω
8
6
4
2
0
0.0
0.5
- 0.45
V
Min.
- 10
Transfer Characteristics
GS
- Gate-to-Source Voltage (V)
1.0
0.070
0.100
0.131
Typ.
- 0.8
5.7
1.2
1.2
10
20
31
26
40
T
S10-0936-Rev. C, 19-Apr-10
8
1.5
C
Document Number: 71320
= - 55
25
°C
°C
2.0
± 100
0.086
0.127
0.164
Max.
- 1.2
- 1
- 5
15
30
45
40
60
9
125
2.5
°C
Unit
nA
µA
nC
ns
Ω
V
A
S
V
3.0