IRF6702M2DTR1PBF International Rectifier, IRF6702M2DTR1PBF Datasheet - Page 2
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IRF6702M2DTR1PBF
Manufacturer Part Number
IRF6702M2DTR1PBF
Description
MOSFET N-CH 30V 15A DL DIRECTFET
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF6702M2DTRPBF.pdf
(10 pages)
Specifications of IRF6702M2DTR1PBF
Input Capacitance (ciss) @ Vds
1380pF @ 15V
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6.6 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
15A
Vgs(th) (max) @ Id
2.35V @ 25µA
Gate Charge (qg) @ Vgs
14nC @ 4.5V
Power - Max
2.7W
Mounting Type
Surface Mount
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF6702M2DTR1P
IRF6702M2DTR1P
IRF6702M2DTR1P
Notes:
IRF6702M2DTR/TR1PbF
∆ΒV
∆V
Static @ T
BV
R
V
I
I
gfs
Q
Q
Q
R
t
t
t
t
C
C
C
Diode Characteristics
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
GS(th)
SD
DS(on)
g
Q
Q
Q
Q
sw
oss
G
iss
oss
rss
rr
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
GS(th)
DSS
gs1
gs2
gd
godr
DSS
/∆T
/∆T
J
J
J
= 25°C (each die unless otherwise specified)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Parameter
g
gs2
+ Q
gd
)
Min. Typ. Max. Units
Min. Typ. Max. Units
1.35
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–––
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–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
30
34
1380
–––
-7.2
–––
–––
–––
–––
–––
290
120
–––
–––
–––
5.2
8.6
1.8
9.4
2.2
1.2
3.3
2.7
4.5
6.3
0.4
20
14
41
15
20
16
17
-100
11.3
2.35
–––
–––
–––
150
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
130
6.6
1.0
1.0
14
32
24
26
mV/°C
mV/°C
mΩ
µA
nA
nC
nC
nC
pF
ns
ns
V
V
S
Ω
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
I
See Fig. 2
V
V
I
R
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 370A/µs
D
D
J
J
GS
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DS
DD
GS
DS
G
= 12A
= 12A
= 6.8Ω
= 25°C, I
= 25°C, I
= 0V, I
= 10V, I
= 4.5V, I
= V
= 24V, V
= 24V, V
= 20V
= -20V
= 15V, I
= 15V
= 4.5V
= 16V, V
= 15V, V
= 0V
= 15V
GS
, I
D
Conditions
D
Conditions
S
F
D
D
= 250µA
D
GS
GS
GS
GS
=12A
= 25µA
= 12A, V
=12A
= 15A
= 12A
= 0V
= 0V, T
= 0V
= 4.5V
i
i
D
i
www.irf.com
GS
= 1mA
J
= 125°C
i
= 0V
i