BPV10 Vishay, BPV10 Datasheet - Page 4

Photodiodes 10V 215mW 875nm

BPV10

Manufacturer Part Number
BPV10
Description
Photodiodes 10V 215mW 875nm
Manufacturer
Vishay
Type
Silicon PIN Photodioder
Datasheets

Specifications of BPV10

Lens Type
Clear Epoxy
Photodiode Material
Silicon
Peak Wavelength
920 nm
Maximum Reverse Voltage
60 V
Maximum Power Dissipation
215 mW
Maximum Light Current
85 uA
Maximum Dark Current
5 nA
Maximum Rise Time
2.5 ns
Maximum Fall Time
2.5 ns
Package / Case
T-1 3/4
Maximum Operating Temperature
+ 100 C
Wavelength Typ
920nm
Sensitivity
0.55A/W
Bandwidth
250MHz
Half Angle
20°
Dark Current
1nA
Diode Case Style
T-1 3/4
No. Of Pins
2
Operating Temperature Range
-40°C To +100°C
Photodiode Type
PIN
Polarity
Forward
Reverse Breakdown Voltage
60V
Forward Voltage
1.3V
Responsivity
0.55A/W
Dark Current (max)
5nA
Power Dissipation
215mW
Light Current
85uA
Rise Time
2.5ns
Fall Time
2.5ns
Mounting
Through Hole
Pin Count
2
Package Type
T-1 3/4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

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Part Number
Manufacturer
Quantity
Price
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BPV10
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BPV10
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
www.vishay.com
4
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Drawing-No.: 6.544-5185.02-4
Issue:1; 01.07.96
96 12199
Ø 5
1
+ 0.2
C
± 0.15
- 0.1
For technical questions, contact:
Silicon PIN Photodiode, RoHS Compliant
2.54 nom.
0.8
0.63
This document is subject to change without notice.
A
+ 0.2
- 0.1
+ 0.2
- 0.1
Chip position
detectortechsupport@vishay.com
0.5
Area not plane
+ 0.15
R 2.45 (sphere)
www.vishay.com/doc?91000
Document Number: 81502
technical drawings
according to DIN
specifications
Rev. 1.7, 07-Apr-11

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